AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors using oxide insulator grown by photoelectrochemical oxidation method

L. H. Huang, Shu Hao Yeh, Ching Ting Lee, Haipeng Tang, Jennifer Bardwell, James B. Webb

研究成果: Article同行評審

58 引文 斯高帕斯(Scopus)

摘要

A photoelectrochemical oxidation method was used to directly grow oxide layer on AlGaN surface. The annealed oxide layer exhibited β- Ga2O3 and α-Al2O3 crystalline phases. Using a photoassisted capacitance-voltage method, a low average interface-state density of 5.1 × 1011 cm-2 · eV-1 was estimated. The directly grown oxide layer was used as gate insulator for AlGaN/GaN MOS high-electron mobility transistors (MOS-HEMTs). The threshold voltage of MOS-HEMT devices is -5 V. The gate leakage currents are 50 and 2 pA at forward gate bias of VGS = 10 V and reverse gate bias of VGS = -10 V, respectively. The maximum value of gm is 50 mS/mm of VGS biased at -2.09 V.

原文English
頁(從 - 到)284-286
頁數3
期刊IEEE Electron Device Letters
29
發行號4
DOIs
出版狀態Published - 2008 四月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 電氣與電子工程

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