AlGaN/GaN metal oxide semiconductor high electron mobility transistor using liquid-phase deposited strontium titanate

Tsu Yi Wu, Chih Chun Hu, Po Wen Sze, Tong Jyun Huang, Feri Adriyanto, Chang Luen Wu, Yeong Her Wang

研究成果: Article同行評審

5 引文 斯高帕斯(Scopus)

摘要

SrTiO3 thin films were deposited on AlGaN/GaN wafer by a simple, low-temperature liquid-phase deposition (LPD) method, and applied as the gate dielectric in metal oxide semiconductor high electron mobility transistor (MOSHEMT). X-ray diffraction and electrical characteristics were measured to investigate the film phase and leakage current. AlGaN/GaN MOSHEMTs with 20 nm-thick SrTiO3 as the gate dielectric were also fabricated. Compared with its counterpart HEMT, MOSHEMT shows lower leakage current and larger breakdown voltage. The suppressed gate leakage current improves both I on/Ioff ratio and subthreshold slope. Larger maximum drain current density could be achieved with higher Von in the MOSHEMT. Flatter transconductance and wider gate voltage swing of the MOSHEMT demonstrate better device linearity. The lower low-frequency noise is obtained due to the lower surface states.

原文English
頁(從 - 到)1-5
頁數5
期刊Solid-State Electronics
82
DOIs
出版狀態Published - 2013

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程
  • 材料化學

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