AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors using directly grown oxide layer

Li Hsien Huang, Ya Lan Ciou, Shu Hao Yen, Ching Ting Lee

研究成果: Conference contribution

摘要

A photoelectrochemical oxidation method was used to directly grow oxide film on the Al0.15Ga0.85N as the insulation film of the AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs). The gate leakage current at reverse bias of VGS= -7V is 10nA. Even the reverse bias is VGS=-60V, the leakage current is only 102nA. An unity gain cutoff frequency (fT) of 5.6 GHz and a maximum frequency of oscillation (fmax) of 10.6 GHz were measured. These electrical performances are much better than those of GaN-based conventional MES-HEMTs.

原文English
主出版物標題IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
頁面275-278
頁數4
DOIs
出版狀態Published - 2007 十二月 1
事件IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 - Tainan, Taiwan
持續時間: 2007 十二月 202007 十二月 22

出版系列

名字IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

Other

OtherIEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
國家/地區Taiwan
城市Tainan
期間07-12-2007-12-22

All Science Journal Classification (ASJC) codes

  • 電氣與電子工程
  • 電子、光磁材料

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