AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors with ZnO gate layer and (NH4)2Sx surface treatment

Ya Lan Chiou, Chi Sen Lee, Ching Ting Lee

研究成果: Article同行評審

25 引文 斯高帕斯(Scopus)

摘要

The AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) with ZnO gate insulator deposited using a vapor cooling condensation system were fabricated. The AlGaN surface treatment using (NH4) 2Sx was performed to improve the quality of the interface between the ZnO layer and AlGaN layer. The (NH4)2S x-treated MOS-HEMTs exhibited a higher saturation drain-source current of 0.74 A/mm, a maximum extrinsic transconductance of 200 mS/mm, an unit gain cutoff frequency of 9.1 GHz, a maximum frequency of oscillation of 17.1 GHz, and the Hooge's coefficient of 8.28× 10-6. The improved performances of the (NH4)2Sx-treated MOS-HEMTs were attributed to the reduction in surface states.

原文English
文章編號032107
期刊Applied Physics Letters
97
發行號3
DOIs
出版狀態Published - 2010 七月 19

All Science Journal Classification (ASJC) codes

  • 物理與天文學(雜項)

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