AlGaN/GaN Metal-Oxide-Semiconductor High-Electron Mobility Transistors Using Ga2O3 Gate Dielectric Layer Grown by Vapor Cooling Condensation System

Hsin Ying Lee, Ting Wei Chang, Ching Ting Lee

研究成果: Article同行評審

摘要

In this study, intrinsic Ga2O3 (i-Ga2O3) film was deposited at about 80 K using a vapor cooling condensation system. Its bandgap energy was 5.0 eV. Low oxygen vacancy and defects were verified by using photoluminescence and Hall measurements. When a 40-nm-thick i-Ga2O3 film was used as the gate dielectric layer of AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors (MOS-HEMTs), threshold voltage, and gate breakdown voltage were − 3.5 V and − 538.0 V, respectively. The associated gate leakage current of the devices operating at a gate-source voltage of − 100 V was 0.57 μA. Furthermore, a saturation drain-source current of 186.2 mA/mm and a maximum extrinsic transconductance of 85.8 mS/mm were obtained for the devices operating at a gate-source voltage of 0 V and a drain-source voltage of 10 V. The unit gain cutoff frequency and the maximum oscillation frequency were 5.7 GHz and 11.0 GHz, respectively. The normalized noise and Hooge’s coefficient were 3.79 × 10−14 Hz−1 and 5.06 × 10−5, respectively, when the devices operated at a frequency of 100 Hz, with a drain-source voltage of 1 V and a gate-source voltage of 5 V.

原文English
頁(從 - 到)3748-3753
頁數6
期刊Journal of Electronic Materials
50
發行號6
DOIs
出版狀態Published - 2021 六月

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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