AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistor with liquid-phase-deposited barium-doped TiO 2 as a gate dielectric

Chih Chun Hu, Mon Sen Lin, Tsu Yi Wu, Feri Adriyanto, Po Wen Sze, Chang Luen Wu, Yeong Her Wang

研究成果: Article同行評審

19 引文 斯高帕斯(Scopus)

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Engineering & Materials Science

Chemical Compounds