AlGaN/GaN modulation-doped field-effect transistors with An Mg-doped carrier confinement layer

Shoou Jinn Chang, Sun Chin Wei, Yan Kuin Su, Chun Hsing Liu, Shih Chih Chen, Uang Heay Liaw, Tzong Yow Tsai, Tzu Hsuan Hsu

研究成果: Article同行評審

20 引文 斯高帕斯(Scopus)

摘要

AlGaN/GaN modulation-doped field-effect transistors (MODFETs) with and without the Mg-doped semi-insulating carrier confinement layer were prepared and a detailed study on the electrical properties of these samples was performed. The addition of the Mg-doped semi-insulating carrier confinement layer resulted in the degradation of crystal quality. Thus, higher values of gm, IDS and the gate voltage swing are achieved by conventional MODFETs. The source-to-drain (S-D) leakage current of conventional MODFETs was also higher, since carriers could flow through the thick unintentionally doped GaN layer. However, the S-D leakage current was reduced from 50 mA/mm to 6 mA/mm with the insertion of the Mg-doped semi-insulating carrier confinement layer.

原文English
頁(從 - 到)3316-3319
頁數4
期刊Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
42
發行號6 A
DOIs
出版狀態Published - 2003 六月

All Science Journal Classification (ASJC) codes

  • 工程 (全部)
  • 物理與天文學 (全部)

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