AlGaN/GaN MOS-HEMTs with TiO 2 gate dielectric by using non-vacuum ultrasonic spray pyrolysis deposition

H. Y. Liu, C. S. Lee, Wei-Chou Hsu, T. T. Wu, H. S. Huang, S. F. Chen, Y. C. Yang, B. C. Chiang, H. C. Chang

研究成果: Conference contribution

3 引文 (Scopus)

摘要

AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs), grown on the Si substrate, with high-k TiO 2 gate dielectric (k = 53.6) formed by using non-vacuum ultrasonic spray pyrolysis deposition (USPD) method has been investigated. Pulse I-V and low-frequency noise spectra (1/f) are conducted to characterize the interface property. Enhanced device performances have been accomplished for the devised MOS-HEMT (Schottky-gate HEMT) for the gate dimensions of 1 × 100 μιη 2 , including drain-source current density (I DS ) at V GS = 0 V (I DSS0 ) of 384 (342) mA/mm, maximum I DS (I DS, max ) of 650 (511) mA/mm, maximum extrinsic transconductance (gm, max) of 107 (110) mS/mm, two-terminal gate-drain breakdown voltage (BV GD ) of -155 (-105) V, turn-on voltage (V on ) of 3.8 (1.8) V, on-state breakdown (BV DS ) of 139 (94) V, gate-voltage swing (GVS) of 2.7 (1.7) V, and on/off current ratio (I on /I off ) of 4.5 × 105 (3.5 × 102). Consequently, the present MOS-HEMT design by using the cost-effective USPD method is suitable for high-power RF circuit applications.

原文English
主出版物標題2015 IEEE 11th International Conference on Power Electronics and Drive Systems, PEDS 2015
發行者Institute of Electrical and Electronics Engineers Inc.
頁面578-580
頁數3
ISBN(電子)9781479944033
DOIs
出版狀態Published - 2015 八月 14
事件11th IEEE International Conference on Power Electronics and Drive Systems, PEDS 2015 - Sydney, Australia
持續時間: 2015 六月 92015 六月 12

出版系列

名字Proceedings of the International Conference on Power Electronics and Drive Systems
2015-August

Other

Other11th IEEE International Conference on Power Electronics and Drive Systems, PEDS 2015
國家Australia
城市Sydney
期間15-06-0915-06-12

指紋

Spray pyrolysis
Gate dielectrics
High electron mobility transistors
Ultrasonics
Gates (transistor)
Metals
Transconductance
Electric potential
Electric breakdown
Current density
Oxide semiconductors
Networks (circuits)
Substrates
Costs

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

引用此文

Liu, H. Y., Lee, C. S., Hsu, W-C., Wu, T. T., Huang, H. S., Chen, S. F., ... Chang, H. C. (2015). AlGaN/GaN MOS-HEMTs with TiO 2 gate dielectric by using non-vacuum ultrasonic spray pyrolysis deposition 2015 IEEE 11th International Conference on Power Electronics and Drive Systems, PEDS 2015 (頁 578-580). [7203398] (Proceedings of the International Conference on Power Electronics and Drive Systems; 卷 2015-August). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PEDS.2015.7203398
Liu, H. Y. ; Lee, C. S. ; Hsu, Wei-Chou ; Wu, T. T. ; Huang, H. S. ; Chen, S. F. ; Yang, Y. C. ; Chiang, B. C. ; Chang, H. C. / AlGaN/GaN MOS-HEMTs with TiO 2 gate dielectric by using non-vacuum ultrasonic spray pyrolysis deposition 2015 IEEE 11th International Conference on Power Electronics and Drive Systems, PEDS 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 頁 578-580 (Proceedings of the International Conference on Power Electronics and Drive Systems).
@inproceedings{65c827ca403b4493a309c6899a5eee66,
title = "AlGaN/GaN MOS-HEMTs with TiO 2 gate dielectric by using non-vacuum ultrasonic spray pyrolysis deposition",
abstract = "AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs), grown on the Si substrate, with high-k TiO 2 gate dielectric (k = 53.6) formed by using non-vacuum ultrasonic spray pyrolysis deposition (USPD) method has been investigated. Pulse I-V and low-frequency noise spectra (1/f) are conducted to characterize the interface property. Enhanced device performances have been accomplished for the devised MOS-HEMT (Schottky-gate HEMT) for the gate dimensions of 1 × 100 μιη 2 , including drain-source current density (I DS ) at V GS = 0 V (I DSS0 ) of 384 (342) mA/mm, maximum I DS (I DS, max ) of 650 (511) mA/mm, maximum extrinsic transconductance (gm, max) of 107 (110) mS/mm, two-terminal gate-drain breakdown voltage (BV GD ) of -155 (-105) V, turn-on voltage (V on ) of 3.8 (1.8) V, on-state breakdown (BV DS ) of 139 (94) V, gate-voltage swing (GVS) of 2.7 (1.7) V, and on/off current ratio (I on /I off ) of 4.5 × 105 (3.5 × 102). Consequently, the present MOS-HEMT design by using the cost-effective USPD method is suitable for high-power RF circuit applications.",
author = "Liu, {H. Y.} and Lee, {C. S.} and Wei-Chou Hsu and Wu, {T. T.} and Huang, {H. S.} and Chen, {S. F.} and Yang, {Y. C.} and Chiang, {B. C.} and Chang, {H. C.}",
year = "2015",
month = "8",
day = "14",
doi = "10.1109/PEDS.2015.7203398",
language = "English",
series = "Proceedings of the International Conference on Power Electronics and Drive Systems",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "578--580",
booktitle = "2015 IEEE 11th International Conference on Power Electronics and Drive Systems, PEDS 2015",
address = "United States",

}

Liu, HY, Lee, CS, Hsu, W-C, Wu, TT, Huang, HS, Chen, SF, Yang, YC, Chiang, BC & Chang, HC 2015, AlGaN/GaN MOS-HEMTs with TiO 2 gate dielectric by using non-vacuum ultrasonic spray pyrolysis deposition 2015 IEEE 11th International Conference on Power Electronics and Drive Systems, PEDS 2015., 7203398, Proceedings of the International Conference on Power Electronics and Drive Systems, 卷 2015-August, Institute of Electrical and Electronics Engineers Inc., 頁 578-580, 11th IEEE International Conference on Power Electronics and Drive Systems, PEDS 2015, Sydney, Australia, 15-06-09. https://doi.org/10.1109/PEDS.2015.7203398

AlGaN/GaN MOS-HEMTs with TiO 2 gate dielectric by using non-vacuum ultrasonic spray pyrolysis deposition . / Liu, H. Y.; Lee, C. S.; Hsu, Wei-Chou; Wu, T. T.; Huang, H. S.; Chen, S. F.; Yang, Y. C.; Chiang, B. C.; Chang, H. C.

2015 IEEE 11th International Conference on Power Electronics and Drive Systems, PEDS 2015. Institute of Electrical and Electronics Engineers Inc., 2015. p. 578-580 7203398 (Proceedings of the International Conference on Power Electronics and Drive Systems; 卷 2015-August).

研究成果: Conference contribution

TY - GEN

T1 - AlGaN/GaN MOS-HEMTs with TiO 2 gate dielectric by using non-vacuum ultrasonic spray pyrolysis deposition

AU - Liu, H. Y.

AU - Lee, C. S.

AU - Hsu, Wei-Chou

AU - Wu, T. T.

AU - Huang, H. S.

AU - Chen, S. F.

AU - Yang, Y. C.

AU - Chiang, B. C.

AU - Chang, H. C.

PY - 2015/8/14

Y1 - 2015/8/14

N2 - AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs), grown on the Si substrate, with high-k TiO 2 gate dielectric (k = 53.6) formed by using non-vacuum ultrasonic spray pyrolysis deposition (USPD) method has been investigated. Pulse I-V and low-frequency noise spectra (1/f) are conducted to characterize the interface property. Enhanced device performances have been accomplished for the devised MOS-HEMT (Schottky-gate HEMT) for the gate dimensions of 1 × 100 μιη 2 , including drain-source current density (I DS ) at V GS = 0 V (I DSS0 ) of 384 (342) mA/mm, maximum I DS (I DS, max ) of 650 (511) mA/mm, maximum extrinsic transconductance (gm, max) of 107 (110) mS/mm, two-terminal gate-drain breakdown voltage (BV GD ) of -155 (-105) V, turn-on voltage (V on ) of 3.8 (1.8) V, on-state breakdown (BV DS ) of 139 (94) V, gate-voltage swing (GVS) of 2.7 (1.7) V, and on/off current ratio (I on /I off ) of 4.5 × 105 (3.5 × 102). Consequently, the present MOS-HEMT design by using the cost-effective USPD method is suitable for high-power RF circuit applications.

AB - AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs), grown on the Si substrate, with high-k TiO 2 gate dielectric (k = 53.6) formed by using non-vacuum ultrasonic spray pyrolysis deposition (USPD) method has been investigated. Pulse I-V and low-frequency noise spectra (1/f) are conducted to characterize the interface property. Enhanced device performances have been accomplished for the devised MOS-HEMT (Schottky-gate HEMT) for the gate dimensions of 1 × 100 μιη 2 , including drain-source current density (I DS ) at V GS = 0 V (I DSS0 ) of 384 (342) mA/mm, maximum I DS (I DS, max ) of 650 (511) mA/mm, maximum extrinsic transconductance (gm, max) of 107 (110) mS/mm, two-terminal gate-drain breakdown voltage (BV GD ) of -155 (-105) V, turn-on voltage (V on ) of 3.8 (1.8) V, on-state breakdown (BV DS ) of 139 (94) V, gate-voltage swing (GVS) of 2.7 (1.7) V, and on/off current ratio (I on /I off ) of 4.5 × 105 (3.5 × 102). Consequently, the present MOS-HEMT design by using the cost-effective USPD method is suitable for high-power RF circuit applications.

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U2 - 10.1109/PEDS.2015.7203398

DO - 10.1109/PEDS.2015.7203398

M3 - Conference contribution

AN - SCOPUS:84952001597

T3 - Proceedings of the International Conference on Power Electronics and Drive Systems

SP - 578

EP - 580

BT - 2015 IEEE 11th International Conference on Power Electronics and Drive Systems, PEDS 2015

PB - Institute of Electrical and Electronics Engineers Inc.

ER -

Liu HY, Lee CS, Hsu W-C, Wu TT, Huang HS, Chen SF 等. AlGaN/GaN MOS-HEMTs with TiO 2 gate dielectric by using non-vacuum ultrasonic spray pyrolysis deposition 於 2015 IEEE 11th International Conference on Power Electronics and Drive Systems, PEDS 2015. Institute of Electrical and Electronics Engineers Inc. 2015. p. 578-580. 7203398. (Proceedings of the International Conference on Power Electronics and Drive Systems). https://doi.org/10.1109/PEDS.2015.7203398