TY - GEN
T1 - AlGaN/GaN MOS-HEMTs with TiO2 gate dielectric by using non-vacuum ultrasonic spray pyrolysis deposition
AU - Liu, H. Y.
AU - Lee, C. S.
AU - Hsu, W. C.
AU - Wu, T. T.
AU - Huang, H. S.
AU - Chen, S. F.
AU - Yang, Y. C.
AU - Chiang, B. C.
AU - Chang, H. C.
N1 - Publisher Copyright:
© 2015 IEEE.
PY - 2015/8/14
Y1 - 2015/8/14
N2 - AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs), grown on the Si substrate, with high-k TiO2 gate dielectric (k = 53.6) formed by using non-vacuum ultrasonic spray pyrolysis deposition (USPD) method has been investigated. Pulse I-V and low-frequency noise spectra (1/f) are conducted to characterize the interface property. Enhanced device performances have been accomplished for the devised MOS-HEMT (Schottky-gate HEMT) for the gate dimensions of 1 × 100 μιη2, including drain-source current density (IDS) at VGS = 0 V (IDSS0) of 384 (342) mA/mm, maximum IDS (IDS, max) of 650 (511) mA/mm, maximum extrinsic transconductance (gm, max) of 107 (110) mS/mm, two-terminal gate-drain breakdown voltage (BVGD) of -155 (-105) V, turn-on voltage (Von) of 3.8 (1.8) V, on-state breakdown (BVDS) of 139 (94) V, gate-voltage swing (GVS) of 2.7 (1.7) V, and on/off current ratio (Ion/Ioff) of 4.5 × 105 (3.5 × 102). Consequently, the present MOS-HEMT design by using the cost-effective USPD method is suitable for high-power RF circuit applications.
AB - AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs), grown on the Si substrate, with high-k TiO2 gate dielectric (k = 53.6) formed by using non-vacuum ultrasonic spray pyrolysis deposition (USPD) method has been investigated. Pulse I-V and low-frequency noise spectra (1/f) are conducted to characterize the interface property. Enhanced device performances have been accomplished for the devised MOS-HEMT (Schottky-gate HEMT) for the gate dimensions of 1 × 100 μιη2, including drain-source current density (IDS) at VGS = 0 V (IDSS0) of 384 (342) mA/mm, maximum IDS (IDS, max) of 650 (511) mA/mm, maximum extrinsic transconductance (gm, max) of 107 (110) mS/mm, two-terminal gate-drain breakdown voltage (BVGD) of -155 (-105) V, turn-on voltage (Von) of 3.8 (1.8) V, on-state breakdown (BVDS) of 139 (94) V, gate-voltage swing (GVS) of 2.7 (1.7) V, and on/off current ratio (Ion/Ioff) of 4.5 × 105 (3.5 × 102). Consequently, the present MOS-HEMT design by using the cost-effective USPD method is suitable for high-power RF circuit applications.
UR - https://www.scopus.com/pages/publications/84952001597
UR - https://www.scopus.com/pages/publications/84952001597#tab=citedBy
U2 - 10.1109/PEDS.2015.7203398
DO - 10.1109/PEDS.2015.7203398
M3 - Conference contribution
AN - SCOPUS:84952001597
T3 - Proceedings of the International Conference on Power Electronics and Drive Systems
SP - 578
EP - 580
BT - 2015 IEEE 11th International Conference on Power Electronics and Drive Systems, PEDS 2015
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 11th IEEE International Conference on Power Electronics and Drive Systems, PEDS 2015
Y2 - 9 June 2015 through 12 June 2015
ER -