AlGaN/GaN MOS-HEMTs with ZnO gate insulator and chlorine surface treatment

Ya Lan Chiou, Ching Ting Lee

研究成果: Conference contribution

摘要

AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) were fabricated with ZnO gate insulator and chlorine surface treatment. It is revealed that the chlorine treatment reduced the gate lag phenomenon and enhanced the device performance. The gate leakage current was also reduced about one order of magnitude in comparison to the conventional one. The chlorine-treated MOS-HEMTs exhibited a saturation drain-source current of 0.85 A/mm, a peak extrinsic transconductance of 207 mS/mm, and an off-state breakdown voltage larger than 100V. This significant improvement was owing to the reduction in surface state density, which was resulted from the decrease of Ga dangling bonds and the passivation of N vacancies on the AlGaN surface.

原文English
主出版物標題TENCON 2010 - 2010 IEEE Region 10 Conference
頁面1222-1224
頁數3
DOIs
出版狀態Published - 2010
事件2010 IEEE Region 10 Conference, TENCON 2010 - Fukuoka, Japan
持續時間: 2010 十一月 212010 十一月 24

Other

Other2010 IEEE Region 10 Conference, TENCON 2010
國家Japan
城市Fukuoka
期間10-11-2110-11-24

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Computer Science Applications

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