AlGaN/GaN MOS-HFETs based on InGaN/GaN MQW structures with Ta 2O 5 dielectric

K. H. Lee, P. C. Chang, S. J. Chang, Y. C. Yin

研究成果: Article

摘要

We report on metal-oxide-semiconductor (MOS) AlGaN/GaN heterostructure field effect transistors (HFETs) based on InGaN/GaN multiple quantum well (MQW) structure using Ta 2O 5 dielectric deposited by electron beam evaporation (EBE) simultaneously for surface passivation and as a gate insulator. The device features a 5-pair MQW layer inserted into the AlGaN/GaN two-channel HFET structure. It results in a raised potential barrier, which leads to better carrier confinement and effective access to the InGaN layer. However, it revealed a pronounced leakage current which may be generated from the bottom Si-doped GaN and/or the sidewall leakage paths due to the exposure of channels after mesa etching. Both passivated MQW-HFET and MOS MQW-HFET present enhanced dc-and pulsed-mode performance compared to unpassivated one. In terms of transfer characteristics, MOS MQW-HFET exhibits the larger and broader main peak yet smaller satellite peak relative to passivated MQW-HFET. The reduced gate and mesa-to-mesa leakage current indicates the successful passivation effect from EBE-Ta 2O 5 dielectric.

原文English
文章編號30102
期刊EPJ Applied Physics
57
發行號3
DOIs
出版狀態Published - 2012 三月 1

指紋

High electron mobility transistors
metal oxide semiconductors
Semiconductor quantum wells
field effect transistors
Metals
quantum wells
mesas
leakage
Passivation
Leakage currents
passivity
Electron beams
Evaporation
evaporation
electron beams
aluminum gallium nitride
Oxide semiconductors
Etching
insulators
etching

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics

引用此文

Lee, K. H. ; Chang, P. C. ; Chang, S. J. ; Yin, Y. C. / AlGaN/GaN MOS-HFETs based on InGaN/GaN MQW structures with Ta 2O 5 dielectric. 於: EPJ Applied Physics. 2012 ; 卷 57, 編號 3.
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abstract = "We report on metal-oxide-semiconductor (MOS) AlGaN/GaN heterostructure field effect transistors (HFETs) based on InGaN/GaN multiple quantum well (MQW) structure using Ta 2O 5 dielectric deposited by electron beam evaporation (EBE) simultaneously for surface passivation and as a gate insulator. The device features a 5-pair MQW layer inserted into the AlGaN/GaN two-channel HFET structure. It results in a raised potential barrier, which leads to better carrier confinement and effective access to the InGaN layer. However, it revealed a pronounced leakage current which may be generated from the bottom Si-doped GaN and/or the sidewall leakage paths due to the exposure of channels after mesa etching. Both passivated MQW-HFET and MOS MQW-HFET present enhanced dc-and pulsed-mode performance compared to unpassivated one. In terms of transfer characteristics, MOS MQW-HFET exhibits the larger and broader main peak yet smaller satellite peak relative to passivated MQW-HFET. The reduced gate and mesa-to-mesa leakage current indicates the successful passivation effect from EBE-Ta 2O 5 dielectric.",
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AlGaN/GaN MOS-HFETs based on InGaN/GaN MQW structures with Ta 2O 5 dielectric. / Lee, K. H.; Chang, P. C.; Chang, S. J.; Yin, Y. C.

於: EPJ Applied Physics, 卷 57, 編號 3, 30102, 01.03.2012.

研究成果: Article

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N2 - We report on metal-oxide-semiconductor (MOS) AlGaN/GaN heterostructure field effect transistors (HFETs) based on InGaN/GaN multiple quantum well (MQW) structure using Ta 2O 5 dielectric deposited by electron beam evaporation (EBE) simultaneously for surface passivation and as a gate insulator. The device features a 5-pair MQW layer inserted into the AlGaN/GaN two-channel HFET structure. It results in a raised potential barrier, which leads to better carrier confinement and effective access to the InGaN layer. However, it revealed a pronounced leakage current which may be generated from the bottom Si-doped GaN and/or the sidewall leakage paths due to the exposure of channels after mesa etching. Both passivated MQW-HFET and MOS MQW-HFET present enhanced dc-and pulsed-mode performance compared to unpassivated one. In terms of transfer characteristics, MOS MQW-HFET exhibits the larger and broader main peak yet smaller satellite peak relative to passivated MQW-HFET. The reduced gate and mesa-to-mesa leakage current indicates the successful passivation effect from EBE-Ta 2O 5 dielectric.

AB - We report on metal-oxide-semiconductor (MOS) AlGaN/GaN heterostructure field effect transistors (HFETs) based on InGaN/GaN multiple quantum well (MQW) structure using Ta 2O 5 dielectric deposited by electron beam evaporation (EBE) simultaneously for surface passivation and as a gate insulator. The device features a 5-pair MQW layer inserted into the AlGaN/GaN two-channel HFET structure. It results in a raised potential barrier, which leads to better carrier confinement and effective access to the InGaN layer. However, it revealed a pronounced leakage current which may be generated from the bottom Si-doped GaN and/or the sidewall leakage paths due to the exposure of channels after mesa etching. Both passivated MQW-HFET and MOS MQW-HFET present enhanced dc-and pulsed-mode performance compared to unpassivated one. In terms of transfer characteristics, MOS MQW-HFET exhibits the larger and broader main peak yet smaller satellite peak relative to passivated MQW-HFET. The reduced gate and mesa-to-mesa leakage current indicates the successful passivation effect from EBE-Ta 2O 5 dielectric.

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