AlGaN/GaN MOS-HFETs based on InGaN/GaN MQW structures with Ta 2O 5 dielectric

K. H. Lee, P. C. Chang, S. J. Chang, Y. C. Yin

研究成果: Article同行評審

摘要

We report on metal-oxide-semiconductor (MOS) AlGaN/GaN heterostructure field effect transistors (HFETs) based on InGaN/GaN multiple quantum well (MQW) structure using Ta 2O 5 dielectric deposited by electron beam evaporation (EBE) simultaneously for surface passivation and as a gate insulator. The device features a 5-pair MQW layer inserted into the AlGaN/GaN two-channel HFET structure. It results in a raised potential barrier, which leads to better carrier confinement and effective access to the InGaN layer. However, it revealed a pronounced leakage current which may be generated from the bottom Si-doped GaN and/or the sidewall leakage paths due to the exposure of channels after mesa etching. Both passivated MQW-HFET and MOS MQW-HFET present enhanced dc-and pulsed-mode performance compared to unpassivated one. In terms of transfer characteristics, MOS MQW-HFET exhibits the larger and broader main peak yet smaller satellite peak relative to passivated MQW-HFET. The reduced gate and mesa-to-mesa leakage current indicates the successful passivation effect from EBE-Ta 2O 5 dielectric.

原文English
文章編號30102
期刊EPJ Applied Physics
57
發行號3
DOIs
出版狀態Published - 2012 三月

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics

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