AlGaN/GaN MOS-HFETs based on InGaN/GaN MQW structures with Ta ₂O ₅ dielectric

Engineering & Materials Science

• Semiconductor quantum wells 100%
• Oxide semiconductors 75%
• High electron mobility transistors 74%
• Metals 41%
• Passivation 25%
• Electron beams 25%
• Leakage currents 22%
• Evaporation 21%
• Small satellites 12%
• Etching 11%

Physics & Astronomy

• metal oxide semiconductors 65%
• field effect transistors 50%
• quantum wells 49%
• mesas 36%
• leakage 26%
• passivity 19%
• evaporation 16%
• electron beams 15%
• etching 8%
• insulators 7%
• performance 4%

Chemical Compounds

• Field Effect 63%
• Dielectric Material 56%
• Leakage Current 28%
• Electron Beam Evaporation 16%
• Potential Barrier 13%
• Nonconductor 11%
• Electron Beam 11%
• Chemical Passivation 10%
• Etching 9%