AlGaN/GaN MOSHFET with a SiO2 gate by liquid phase deposition

J. J. Huang, P. W. Sze, S. K. Lin, W. C. Lai, Yeong-Her Wang, Mau-phon Houng

研究成果: Conference article

摘要

An efficient and low cost approach for depositing uniform silicon dioxide layers on GaN by liquid phase deposition (LPD) that is near room temperature will be described. The self-align and self-passivation process of LPD can ease the device fabrication. AlGaN/GaN metal oxide semiconductor heterostructure field effect transistors (MOSHFETs) with liquid phase deposited SiO2 as the insulating gate are demonstrated. Comparison between the AlGaN/GaN MOSHFETs and heterostructure field effect transistors (HFETs) will be made. Lower leakage currents, larger gate swing voltages and flatter transconductance ranges can be seen in MOSHFETs.

原文English
頁(從 - 到)94-96
頁數3
期刊Physica Scripta T
T114
DOIs
出版狀態Published - 2004 十二月 1
事件20th Nordic Semiconductor Meeting, NSM20 - Tampere, Finland
持續時間: 2003 八月 252003 八月 27

    指紋

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Mathematical Physics
  • Condensed Matter Physics

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