AlGaN/GaN MSM photodetectors with photo-CVD annealed Ni/Au semi-transparent contacts

P. C. Chang, C. H. Chen, S. J. Chang, Y. K. Su, C. L. Yu, P. C. Chen, C. H. Wang

研究成果: Article同行評審

26 引文 斯高帕斯(Scopus)

摘要

AlGaN/GaN metal-semiconductor-metal (MSM) ultraviolet (UV) photodetectors with photo-chemical vapour deposition (photo-CVD) annealed Ni/Au semi-transparent contacts were fabricated. It was found that the transmittances of Ni/Au films increased while the photodetector dark currents became significantly lower after annealing. With a 5 V applied bias, it was found that the photocurrent to dark current contrast ratio and the maximum responsivity were 2.3 × 104 and 0.166 A W-1 for photodetector photo-CVD annealed at 550°C.

原文English
頁(從 - 到)1354-1357
頁數4
期刊Semiconductor Science and Technology
19
發行號12
DOIs
出版狀態Published - 2004 十二月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程
  • 材料化學

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