AlGaNGaN Schottky barrier diodes with multi-MgxNyGaN buffer

K. H. Lee, S. J. Chang, P. C. Chang, Y. C. Wang, C. H. Kuo

研究成果: Article同行評審

5 引文 斯高帕斯(Scopus)

摘要

AlGaNGaN Schottky barrier diodes (SBDs) with multi- Mgx Ny GaN buffer were fabricated and investigated. It was found that we can effectively suppress the formation of threading dislocation in the epitaxial layers and thus obtain better crystal quality using the multi- Mgx Ny GaN buffer. It was also found that we can achieve a larger effective Schottky barrier height and thus reduce leakage current of the SBDs by using the multi- Mgx Ny GaN buffer.

原文English
頁(從 - 到)H716-H719
期刊Journal of the Electrochemical Society
155
發行號10
DOIs
出版狀態Published - 2008 九月 22

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 可再生能源、永續發展與環境
  • 表面、塗料和薄膜
  • 電化學
  • 材料化學

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