@article{fa646978a4274ddf92248fa96c7b88da,
title = "AlGaN/GaN Schottky barrier photodetector with multi-MgxN y/GaN buffer",
abstract = "AlGaN/GaN heterostructure Schottky barrier photodetector (PD) with multi-MgxNy/GaN buffer was proposed and fabricated. Compared with AlGaN/GaN heterostructure PD prepared on conventional low-temperature GaN buffer, it was found that we can reduce dark leakage current by more than three orders of magnitude. It was also found that we can use the multi-MgxNy/GaN buffer to suppress photoconductance gain, enhance UV-to-visible rejection ratio, reduce noise level and enhance the detectivity.",
author = "Chang, {S. J.} and Lee, {K. H.} and Chang, {P. C.} and Wang, {Y. C.} and Kuo, {C. H.} and Wu, {S. L.}",
note = "Funding Information: Manuscript received May 23, 2008; revised July 19, 2008; accepted July 21, 2008. Current version published January 09, 2009. This work was supported in part by the Center for Frontier Materials and Micro/Nano Science and Technology, National Cheng Kung University, Taiwan (D97-2700). This work was also in part supported by the Advanced Optoelectronic Technology Center, National Cheng Kung University, under projects from the Ministry of Education.",
year = "2009",
month = feb,
doi = "10.1109/JSEN.2008.2011070",
language = "English",
volume = "9",
pages = "87--92",
journal = "IEEE Sensors Journal",
issn = "1530-437X",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "2",
}