AlGaN/GaN Schottky barrier photodetector with multi-MgxN y/GaN buffer

S. J. Chang, K. H. Lee, P. C. Chang, Y. C. Wang, C. H. Kuo, S. L. Wu

研究成果: Article同行評審

12 引文 斯高帕斯(Scopus)

摘要

AlGaN/GaN heterostructure Schottky barrier photodetector (PD) with multi-MgxNy/GaN buffer was proposed and fabricated. Compared with AlGaN/GaN heterostructure PD prepared on conventional low-temperature GaN buffer, it was found that we can reduce dark leakage current by more than three orders of magnitude. It was also found that we can use the multi-MgxNy/GaN buffer to suppress photoconductance gain, enhance UV-to-visible rejection ratio, reduce noise level and enhance the detectivity.

原文English
文章編號4749393
頁(從 - 到)87-92
頁數6
期刊IEEE Sensors Journal
9
發行號2
DOIs
出版狀態Published - 2009 二月

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Electrical and Electronic Engineering

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