AlGaN/GaN Schottky barrier photodetector with multi-MgxN y/GaN buffer

S. J. Chang; K. H. Lee; P. C. Chang; Y. C. Wang; C. H. Kuo; S. L. Wu

doi:10.1109/JSEN.2008.2011070

AlGaN/GaN Schottky barrier photodetector with multi-Mg_xN _y/GaN buffer

S. J. Chang
, K. H. Lee
, P. C. Chang
, Y. C. Wang
, C. H. Kuo
, S. L. Wu

研究成果: Article › 同行評審

14 引文斯高帕斯（Scopus）

摘要

AlGaN/GaN heterostructure Schottky barrier photodetector (PD) with multi-Mg_xN_y/GaN buffer was proposed and fabricated. Compared with AlGaN/GaN heterostructure PD prepared on conventional low-temperature GaN buffer, it was found that we can reduce dark leakage current by more than three orders of magnitude. It was also found that we can use the multi-Mg_xN_y/GaN buffer to suppress photoconductance gain, enhance UV-to-visible rejection ratio, reduce noise level and enhance the detectivity.

原文	English
文章編號	4749393
頁（從 - 到）	87-92
頁數	6
期刊	IEEE Sensors Journal
卷	9
發行號	2
DOIs	https://doi.org/10.1109/JSEN.2008.2011070
出版狀態	Published - 2009 2月

All Science Journal Classification (ASJC) codes

儀器
電氣與電子工程

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10.1109/JSEN.2008.2011070

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引用此

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title = "AlGaN/GaN Schottky barrier photodetector with multi-MgxN y/GaN buffer",

abstract = "AlGaN/GaN heterostructure Schottky barrier photodetector (PD) with multi-MgxNy/GaN buffer was proposed and fabricated. Compared with AlGaN/GaN heterostructure PD prepared on conventional low-temperature GaN buffer, it was found that we can reduce dark leakage current by more than three orders of magnitude. It was also found that we can use the multi-MgxNy/GaN buffer to suppress photoconductance gain, enhance UV-to-visible rejection ratio, reduce noise level and enhance the detectivity.",

author = "Chang, \{S. J.\} and Lee, \{K. H.\} and Chang, \{P. C.\} and Wang, \{Y. C.\} and Kuo, \{C. H.\} and Wu, \{S. L.\}",

note = "Funding Information: Manuscript received May 23, 2008; revised July 19, 2008; accepted July 21, 2008. Current version published January 09, 2009. This work was supported in part by the Center for Frontier Materials and Micro/Nano Science and Technology, National Cheng Kung University, Taiwan (D97-2700). This work was also in part supported by the Advanced Optoelectronic Technology Center, National Cheng Kung University, under projects from the Ministry of Education.",

year = "2009",

month = feb,

doi = "10.1109/JSEN.2008.2011070",

language = "English",

volume = "9",

pages = "87--92",

journal = "IEEE Sensors Journal",

issn = "1530-437X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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TY - JOUR

T1 - AlGaN/GaN Schottky barrier photodetector with multi-MgxN y/GaN buffer

AU - Chang, S. J.

AU - Lee, K. H.

AU - Chang, P. C.

AU - Wang, Y. C.

AU - Kuo, C. H.

AU - Wu, S. L.

N1 - Funding Information: Manuscript received May 23, 2008; revised July 19, 2008; accepted July 21, 2008. Current version published January 09, 2009. This work was supported in part by the Center for Frontier Materials and Micro/Nano Science and Technology, National Cheng Kung University, Taiwan (D97-2700). This work was also in part supported by the Advanced Optoelectronic Technology Center, National Cheng Kung University, under projects from the Ministry of Education.

PY - 2009/2

Y1 - 2009/2

N2 - AlGaN/GaN heterostructure Schottky barrier photodetector (PD) with multi-MgxNy/GaN buffer was proposed and fabricated. Compared with AlGaN/GaN heterostructure PD prepared on conventional low-temperature GaN buffer, it was found that we can reduce dark leakage current by more than three orders of magnitude. It was also found that we can use the multi-MgxNy/GaN buffer to suppress photoconductance gain, enhance UV-to-visible rejection ratio, reduce noise level and enhance the detectivity.

AB - AlGaN/GaN heterostructure Schottky barrier photodetector (PD) with multi-MgxNy/GaN buffer was proposed and fabricated. Compared with AlGaN/GaN heterostructure PD prepared on conventional low-temperature GaN buffer, it was found that we can reduce dark leakage current by more than three orders of magnitude. It was also found that we can use the multi-MgxNy/GaN buffer to suppress photoconductance gain, enhance UV-to-visible rejection ratio, reduce noise level and enhance the detectivity.

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U2 - 10.1109/JSEN.2008.2011070

DO - 10.1109/JSEN.2008.2011070

M3 - Article

AN - SCOPUS:68349154812

SN - 1530-437X

VL - 9

SP - 87

EP - 92

JO - IEEE Sensors Journal

JF - IEEE Sensors Journal

IS - 2

M1 - 4749393

ER -

AlGaN/GaN Schottky barrier photodetector with multi-MgxN y/GaN buffer

摘要

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AlGaN/GaN Schottky barrier photodetector with multi-Mg_xN _y/GaN buffer