AlGaN/GaN Schottky-barrier UV-B bandpass photodetectors with ITO contacts and LT-GaN cap layers

T. K. Ko, S. J. Chang, J. K. Sheu, S. C. Shei, Y. Z. Chiou, M. L. Lee, C. F. Shen, S. P. Chang, K. W. Lin

研究成果: Article同行評審

14 引文 斯高帕斯(Scopus)

摘要

Al0.2Ga0.8N/GaN Schottky-barrier ultraviolet (UV)-B bandpass photodetectors (PDs) with indium-tin-oxide (ITO) contact on low-temperature (LT)-GaN cap layers were fabricated and characterized. It was found that dark currents of our PDs were low due to the highly resistive LT GaN cap layers. It was also found that we can realize UV-B PDs with different bandwidths by controlling thickness and annealing conditions. The detectivity, D*, of the PDs with ITO contacts was also larger than the conventional PDs with Ni/Au contacts.

原文English
文章編號014
頁(從 - 到)1064-1068
頁數5
期刊Semiconductor Science and Technology
21
發行號8
DOIs
出版狀態Published - 2006 八月 1

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程
  • 材料化學

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