AlInAs/InGaAs long-period-superlattice resonant-tunneling transistor (LPSRTT) prepared by MOCVD

Shiou Ying Cheng, Po Hung Lin, Wei Chou Wang, Jing Yuh Chen, Wen Chau Liu

研究成果: Conference article同行評審

摘要

A new GaInAs/AlInAs long-period-superlattice resonant tunneling transistor (LPSRTT) with a 20-period i-AlGaAs/n+-GaInAs superlattice was demonstrated. The superlattice was grown by metallorganic chemical vapor deposition on a (100) oriented n+-InP substrate. The good transistor performances are obtained both 300 K and 77 K. Furthermore, a significant N-shaped negative differential resistance phenomenon resulting from room temperature through the superlattice is obtained in the studied LPSRTT device at 77 K.

原文English
頁(從 - 到)77-78
頁數2
期刊Conference Proceedings - International Conference on Indium Phosphide and Related Materials
出版狀態Published - 1997 一月 1
事件Proceedings of the 1997 International Conference on Indium Phosphide and Related Materials - Cape Cod, MA, USA
持續時間: 1997 五月 111997 五月 15

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 電氣與電子工程

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