A new GaInAs/AlInAs long-period-superlattice resonant tunneling transistor (LPSRTT) with a 20-period i-AlGaAs/n+-GaInAs superlattice was demonstrated. The superlattice was grown by metallorganic chemical vapor deposition on a (100) oriented n+-InP substrate. The good transistor performances are obtained both 300 K and 77 K. Furthermore, a significant N-shaped negative differential resistance phenomenon resulting from room temperature through the superlattice is obtained in the studied LPSRTT device at 77 K.
|頁（從 - 到）||77-78|
|期刊||Conference Proceedings - International Conference on Indium Phosphide and Related Materials|
|出版狀態||Published - 1997 一月 1|
|事件||Proceedings of the 1997 International Conference on Indium Phosphide and Related Materials - Cape Cod, MA, USA|
持續時間: 1997 五月 11 → 1997 五月 15
All Science Journal Classification (ASJC) codes