TY - JOUR
T1 - AlInN resistive ammonia gas sensors
AU - Weng, W. Y.
AU - Chang, S. J.
AU - Hsueh, T. J.
AU - Hsu, C. L.
AU - Li, M. J.
AU - Lai, W. C.
N1 - Funding Information:
This work was granted by the Center for Frontier Materials and Micro/Nano Science and Technology, National Cheng Kung University, Taiwan (D97-2700). This work was also in part supported by the Advanced Optoelectronic Technology Center, National Cheng Kung University, under projects from the Ministry of Education.
PY - 2009/6/18
Y1 - 2009/6/18
N2 - We report the growth of AlInN epitaxial layer and the fabrication of AlInN resistive NH3 gas sensor. It was found that surface morphology of the AlInN was rough with quantum dot like nano-islands. It was also found that the conductance of these AlInN nano-islands increased as NH3 gas was introduced into the test chamber. At 350 °C, it was found that measured incremental currents were around 105, 127, 147 and 157 μA when concentration of the injected NH3 gas was 500, 1000, 2000 and 4000 ppm, respectively.
AB - We report the growth of AlInN epitaxial layer and the fabrication of AlInN resistive NH3 gas sensor. It was found that surface morphology of the AlInN was rough with quantum dot like nano-islands. It was also found that the conductance of these AlInN nano-islands increased as NH3 gas was introduced into the test chamber. At 350 °C, it was found that measured incremental currents were around 105, 127, 147 and 157 μA when concentration of the injected NH3 gas was 500, 1000, 2000 and 4000 ppm, respectively.
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U2 - 10.1016/j.snb.2009.04.017
DO - 10.1016/j.snb.2009.04.017
M3 - Article
AN - SCOPUS:66949135488
SN - 0925-4005
VL - 140
SP - 139
EP - 142
JO - Sensors and Actuators, B: Chemical
JF - Sensors and Actuators, B: Chemical
IS - 1
ER -