AlInN resistive ammonia gas sensors

W. Y. Weng; S. J. Chang; T. J. Hsueh; C. L. Hsu; M. J. Li; W. C. Lai

doi:10.1016/j.snb.2009.04.017

AlInN resistive ammonia gas sensors

W. Y. Weng
, S. J. Chang
, T. J. Hsueh
, C. L. Hsu
, M. J. Li
, W. C. Lai

研究成果: Article › 同行評審

26 引文斯高帕斯（Scopus）

摘要

We report the growth of AlInN epitaxial layer and the fabrication of AlInN resistive NH₃ gas sensor. It was found that surface morphology of the AlInN was rough with quantum dot like nano-islands. It was also found that the conductance of these AlInN nano-islands increased as NH₃ gas was introduced into the test chamber. At 350 °C, it was found that measured incremental currents were around 105, 127, 147 and 157 μA when concentration of the injected NH₃ gas was 500, 1000, 2000 and 4000 ppm, respectively.

原文	English
頁（從 - 到）	139-142
頁數	4
期刊	Sensors and Actuators, B: Chemical
卷	140
發行號	1
DOIs	https://doi.org/10.1016/j.snb.2009.04.017
出版狀態	Published - 2009 6月 18

All Science Journal Classification (ASJC) codes

電子、光磁材料
儀器
凝聚態物理學
表面、塗料和薄膜
金屬和合金
電氣與電子工程
材料化學

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10.1016/j.snb.2009.04.017

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title = "AlInN resistive ammonia gas sensors",

abstract = "We report the growth of AlInN epitaxial layer and the fabrication of AlInN resistive NH3 gas sensor. It was found that surface morphology of the AlInN was rough with quantum dot like nano-islands. It was also found that the conductance of these AlInN nano-islands increased as NH3 gas was introduced into the test chamber. At 350 °C, it was found that measured incremental currents were around 105, 127, 147 and 157 μA when concentration of the injected NH3 gas was 500, 1000, 2000 and 4000 ppm, respectively.",

author = "Weng, \{W. Y.\} and Chang, \{S. J.\} and Hsueh, \{T. J.\} and Hsu, \{C. L.\} and Li, \{M. J.\} and Lai, \{W. C.\}",

note = "Funding Information: This work was granted by the Center for Frontier Materials and Micro/Nano Science and Technology, National Cheng Kung University, Taiwan (D97-2700). This work was also in part supported by the Advanced Optoelectronic Technology Center, National Cheng Kung University, under projects from the Ministry of Education. ",

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doi = "10.1016/j.snb.2009.04.017",

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AU - Weng, W. Y.

AU - Chang, S. J.

AU - Hsueh, T. J.

AU - Hsu, C. L.

AU - Li, M. J.

AU - Lai, W. C.

N1 - Funding Information: This work was granted by the Center for Frontier Materials and Micro/Nano Science and Technology, National Cheng Kung University, Taiwan (D97-2700). This work was also in part supported by the Advanced Optoelectronic Technology Center, National Cheng Kung University, under projects from the Ministry of Education.

PY - 2009/6/18

Y1 - 2009/6/18

N2 - We report the growth of AlInN epitaxial layer and the fabrication of AlInN resistive NH3 gas sensor. It was found that surface morphology of the AlInN was rough with quantum dot like nano-islands. It was also found that the conductance of these AlInN nano-islands increased as NH3 gas was introduced into the test chamber. At 350 °C, it was found that measured incremental currents were around 105, 127, 147 and 157 μA when concentration of the injected NH3 gas was 500, 1000, 2000 and 4000 ppm, respectively.

AB - We report the growth of AlInN epitaxial layer and the fabrication of AlInN resistive NH3 gas sensor. It was found that surface morphology of the AlInN was rough with quantum dot like nano-islands. It was also found that the conductance of these AlInN nano-islands increased as NH3 gas was introduced into the test chamber. At 350 °C, it was found that measured incremental currents were around 105, 127, 147 and 157 μA when concentration of the injected NH3 gas was 500, 1000, 2000 and 4000 ppm, respectively.

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DO - 10.1016/j.snb.2009.04.017

M3 - Article

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SN - 0925-4005

VL - 140

SP - 139

EP - 142

JO - Sensors and Actuators, B: Chemical

JF - Sensors and Actuators, B: Chemical

IS - 1

ER -

AlInN resistive ammonia gas sensors

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All Science Journal Classification (ASJC) codes

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