ALL-ELECTRIC SPIN FIELD EFFECT TRANSISTOR

貢獻的翻譯標題: 全電控自旋場效電晶體

Tse-Ming Chen (Inventor)

研究成果: Patent

摘要

An all-electric spin field effect transistor is disclosed, which includes an injection node, injecting an electron in a first spin direction; a detection node, detecting the electron in the first spin direction; and a gate, disposed between the injection node and the detection node such that the electron changes from the first spin direction to a second spin direction by carrying out precession; if the second spin direction is parallel to the first spin direction, the electron is able to pass through the detection node; if the second spin direction is antiparallel to the first spin direction, the electron is unable to pass through the detection node.
貢獻的翻譯標題全電控自旋場效電晶體
原文English
專利號9373709
出版狀態Published - 2015 十二月 17

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