Alleviation of charge trapping and flicker noise in HfZrO2-Based Ferroelectric Capacitors by Thermal Engineering

Sourav De, Wei Xuan Bu, Bo Han Qiu, Chung Jun Su, Yao Jen Lee, Darsen D. Lu

研究成果: Conference contribution

摘要

In this article we proclaim excellent improvement in the defect densities in hafnium zirconium oxide based ferroelectric film obtained by extending the duration of post-metallization annealing up to 180s. The consequences of extending the annealing duration on the structure and surface morphology was gauged by XRD analysis, HR-TEM and AFM, which showed increase in the grain size, well defined crystallinity, lower defect densities and negligible impact on surface roughness. The electrical characterization revealed reduction in RC leakage along with a significant improvement in flicker noise and random telegraphic noise characteristics, which proves reduction of defect densities when the annealing time is increased.

原文English
主出版物標題VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9781665419345
DOIs
出版狀態Published - 2021 四月 19
事件2021 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2021 - Hsinchu, Taiwan
持續時間: 2021 四月 192021 四月 22

出版系列

名字VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings

Conference

Conference2021 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2021
國家/地區Taiwan
城市Hsinchu
期間21-04-1921-04-22

All Science Journal Classification (ASJC) codes

  • 硬體和架構
  • 電氣與電子工程
  • 控制和優化

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