AllnAs/InGaAs long-period-superlattice resonant-tunnelling transistor (LPSRTT)

Shiou Ying Cheng, Po Hung Lin, Wei Chou Wang, Jing Yuh Chen, Wen Chau Liu, Wei Lin

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

A new long-period-superlattice resonant-tunnelling transistor (LPSRTT) with a 20-period i-AlInAs/n-InGaAs superlattice has been fabricated and demonstrated. This device exhibits good transistor performance, e.g. the very small offset voltage. Furthermore, an interesting negative-differential-resistance (NDR) phenomenon resulting from the RT through the superlattice region is obtained at 77 K.

原文English
頁(從 - 到)534-535
頁數2
期刊Electronics Letters
33
發行號6
DOIs
出版狀態Published - 1997 三月 13

All Science Journal Classification (ASJC) codes

  • 電氣與電子工程

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