Al0.25Ga0.75N/GaN enhancement-mode MOS high-electron-mobility transistors with Al2O3 dielectric obtained by ozone water oxidization method

Ching Sung Lee, Wei Chou Hsu, Han Yin Liu, Jung Hui Tsai, Hung Hsi Huang

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

Al0.25Ga0.75N/GaN enhancement-mode (E-mode) metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) obtained by the ozone water oxidization method are investigated in this work. Decreased gate leakage and reduced channel depletion are obtained by forming the Al2O3 dielectric layer of the MOS gate structure by a cost-effective oxidization method. Pulse current-voltage (I-V), low-frequency noise, and Hooge coefficient measurements are compared to verify the interface quality improved by the oxide passivation effect. In comparison, a conventional Schottky-gate HEMT device is also fabricated on the same epitaxial sample. Enhanced device gain, current drive density, breakdown, on/off current ratio, and high-temperature stability up to 450K are also investigated in this work.

原文English
文章編號044102
期刊Japanese Journal of Applied Physics
55
發行號4
DOIs
出版狀態Published - 2016 四月

All Science Journal Classification (ASJC) codes

  • 工程 (全部)
  • 物理與天文學 (全部)

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