Al0.25Ga0.75N/GaN enhancement-mode MOS high-electron-mobility transistors with Al2O3 dielectric obtained by ozone water oxidization method

Ching Sung Lee, Wei-Chou Hsu, Han Yin Liu, Jung Hui Tsai, Hung Hsi Huang

研究成果: Article

2 引文 (Scopus)

摘要

Al0.25Ga0.75N/GaN enhancement-mode (E-mode) metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) obtained by the ozone water oxidization method are investigated in this work. Decreased gate leakage and reduced channel depletion are obtained by forming the Al2O3 dielectric layer of the MOS gate structure by a cost-effective oxidization method. Pulse current-voltage (I-V), low-frequency noise, and Hooge coefficient measurements are compared to verify the interface quality improved by the oxide passivation effect. In comparison, a conventional Schottky-gate HEMT device is also fabricated on the same epitaxial sample. Enhanced device gain, current drive density, breakdown, on/off current ratio, and high-temperature stability up to 450K are also investigated in this work.

原文English
文章編號044102
期刊Japanese Journal of Applied Physics
55
發行號4
DOIs
出版狀態Published - 2016 四月 1

指紋

MOSFET devices
High electron mobility transistors
high electron mobility transistors
Ozone
ozone
augmentation
Passivation
water
Water
metal oxide semiconductors
passivity
Oxides
depletion
Electric potential
leakage
breakdown
Metals
low frequencies
costs
Costs

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

引用此文

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abstract = "Al0.25Ga0.75N/GaN enhancement-mode (E-mode) metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) obtained by the ozone water oxidization method are investigated in this work. Decreased gate leakage and reduced channel depletion are obtained by forming the Al2O3 dielectric layer of the MOS gate structure by a cost-effective oxidization method. Pulse current-voltage (I-V), low-frequency noise, and Hooge coefficient measurements are compared to verify the interface quality improved by the oxide passivation effect. In comparison, a conventional Schottky-gate HEMT device is also fabricated on the same epitaxial sample. Enhanced device gain, current drive density, breakdown, on/off current ratio, and high-temperature stability up to 450K are also investigated in this work.",
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Al0.25Ga0.75N/GaN enhancement-mode MOS high-electron-mobility transistors with Al2O3 dielectric obtained by ozone water oxidization method. / Lee, Ching Sung; Hsu, Wei-Chou; Liu, Han Yin; Tsai, Jung Hui; Huang, Hung Hsi.

於: Japanese Journal of Applied Physics, 卷 55, 編號 4, 044102, 01.04.2016.

研究成果: Article

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T1 - Al0.25Ga0.75N/GaN enhancement-mode MOS high-electron-mobility transistors with Al2O3 dielectric obtained by ozone water oxidization method

AU - Lee, Ching Sung

AU - Hsu, Wei-Chou

AU - Liu, Han Yin

AU - Tsai, Jung Hui

AU - Huang, Hung Hsi

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