Al0.3Ga0.7N/GaN undoped channel heterostructure field effect transistor with Fmax of 107 GHz

R. Li, J. Cai, L. Wong, Y. Chen, K. L. Wang, R. P. Smith, S. C. Martin, K. S. Boutros, J. M. Redwing

研究成果: Article同行評審

68 引文 斯高帕斯(Scopus)

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Engineering & Materials Science

Chemical Compounds