Al0.75Ga0.25N/AlxGa1-xN/Al0.75Ga0.25N/AlN/SiC Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors with Symmetrically-Graded Widegap Channel

Ching Sung Lee, Yan Ting Shen, Wei Chou Hsu, Yi Ping Huang, Cheng Yang You

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)


Novel Al0.75Ga0.25N/AlxGa1-xN/Al0.75Ga0.25N/AlN metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) with symmetrically-graded widegap AlxGa1-xN channel (x =,,0.75 to 0.25 to 0.75 ) grown on a SiC substrate are investigated. Al2O3 was devised as the gate dielectric by using a non-vacuum ultrasonic spray pyrolysis deposition (USPD) technique. Device characteristics with respect to different etch depths of the source/drain recesses were studied. For a 2- mu text{m} gate length ( L{G} ), the present widegap V-shape-channel MOS-HFET has shown improved maximum drain-source current density ( I{DS, max} ) of 299.3 A/mm at {V{DS}} = 20 V, I{DS} density at V{GS} = 0 V ( I{DSS0} ) of 153.9 mA/mm, on/off-current ratio ( I{on} / I{off} ) of 1.4 times 10{7} , extrinsic transconductance ( g{m, max} ) of 16.7 mS/mm, two-terminal off-state gate-drain breakdown voltage ( BV{GD} ) of -379 V, and three-terminal on-state drain-source breakdown voltage ( BV{DS} ) of 339 V. Besides, superior deep-UV sensing performance with high spectral responsivity (SR) of 1780 (810.2) A/W at wavelength {boldsymbol{lambda }} = 250 (300) nm are also achieved.

頁(從 - 到)9-14
期刊IEEE Journal of the Electron Devices Society
出版狀態Published - 2020

All Science Journal Classification (ASJC) codes

  • 生物技術
  • 電子、光磁材料
  • 電氣與電子工程


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