Al2O3-Dielectric InAlN/AlN/GaN Γ-Gate MOS-HFETs with Composite Al2O3/TiO2 passivation oxides

Ching Sung Lee, Xue Cheng Yao, Yi Ping Huang, Wei Chou Hsu

研究成果: Article

1 引文 (Scopus)

摘要

Novel Al2O3-dielectric InAlN/AlN/GaN Γ-Gate metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) with composite Al2O3/TiO2 passivation oxides formed by using ultrasonic spray pyrolysis deposition/RF sputtering, respectively, are investigated. The Γ-gate includes a 1-μm long active gate on the Al2O3 dielectric and a 1-μm long field-plate on the composite Al2O3/TiO2 oxides. The present Γ-Gate MOS-HFET has demonstrated excellent on/off current ratio (Ion/Ioff) of 8.2 × 1010, subthreshold swing of 102.3 mV/dec, maximum extrinsic transconductance of (gm,max) of 210.1 mS/mm, maximum drain-source saturation current density (IDS,max) of 868.3 mA/mm, two-terminal off-state gate-drain breakdown voltage (BVGD) of -311.2 V, three-terminal drain-source breakdown voltage (BVDS) of 237 V at VGS= -10 V, and power-added efficiency of 39.9% at 2.4 GHz. A conventional Schottky-gate HFET and TiO2-dielectric MOS-HFET were also prepared in comparison. The present design has shown superior dc/RF device performance. It is suitable for high-power RF circuit applications.

原文English
文章編號8470934
頁(從 - 到)1142-1146
頁數5
期刊IEEE Journal of the Electron Devices Society
6
DOIs
出版狀態Published - 2018 一月 1

指紋

Semiconductors
High electron mobility transistors
Passivation
Oxides
Metals
Electric breakdown
Composite materials
Spray pyrolysis
Transconductance
Sputtering
Current density
Ultrasonics
Ions
Networks (circuits)
Oxide semiconductors
Equipment and Supplies

All Science Journal Classification (ASJC) codes

  • Biotechnology
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

引用此文

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title = "Al2O3-Dielectric InAlN/AlN/GaN Γ-Gate MOS-HFETs with Composite Al2O3/TiO2 passivation oxides",
abstract = "Novel Al2O3-dielectric InAlN/AlN/GaN Γ-Gate metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) with composite Al2O3/TiO2 passivation oxides formed by using ultrasonic spray pyrolysis deposition/RF sputtering, respectively, are investigated. The Γ-gate includes a 1-μm long active gate on the Al2O3 dielectric and a 1-μm long field-plate on the composite Al2O3/TiO2 oxides. The present Γ-Gate MOS-HFET has demonstrated excellent on/off current ratio (Ion/Ioff) of 8.2 × 1010, subthreshold swing of 102.3 mV/dec, maximum extrinsic transconductance of (gm,max) of 210.1 mS/mm, maximum drain-source saturation current density (IDS,max) of 868.3 mA/mm, two-terminal off-state gate-drain breakdown voltage (BVGD) of -311.2 V, three-terminal drain-source breakdown voltage (BVDS) of 237 V at VGS= -10 V, and power-added efficiency of 39.9{\%} at 2.4 GHz. A conventional Schottky-gate HFET and TiO2-dielectric MOS-HFET were also prepared in comparison. The present design has shown superior dc/RF device performance. It is suitable for high-power RF circuit applications.",
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Al2O3-Dielectric InAlN/AlN/GaN Γ-Gate MOS-HFETs with Composite Al2O3/TiO2 passivation oxides. / Lee, Ching Sung; Yao, Xue Cheng; Huang, Yi Ping; Hsu, Wei Chou.

於: IEEE Journal of the Electron Devices Society, 卷 6, 8470934, 01.01.2018, p. 1142-1146.

研究成果: Article

TY - JOUR

T1 - Al2O3-Dielectric InAlN/AlN/GaN Γ-Gate MOS-HFETs with Composite Al2O3/TiO2 passivation oxides

AU - Lee, Ching Sung

AU - Yao, Xue Cheng

AU - Huang, Yi Ping

AU - Hsu, Wei Chou

PY - 2018/1/1

Y1 - 2018/1/1

N2 - Novel Al2O3-dielectric InAlN/AlN/GaN Γ-Gate metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) with composite Al2O3/TiO2 passivation oxides formed by using ultrasonic spray pyrolysis deposition/RF sputtering, respectively, are investigated. The Γ-gate includes a 1-μm long active gate on the Al2O3 dielectric and a 1-μm long field-plate on the composite Al2O3/TiO2 oxides. The present Γ-Gate MOS-HFET has demonstrated excellent on/off current ratio (Ion/Ioff) of 8.2 × 1010, subthreshold swing of 102.3 mV/dec, maximum extrinsic transconductance of (gm,max) of 210.1 mS/mm, maximum drain-source saturation current density (IDS,max) of 868.3 mA/mm, two-terminal off-state gate-drain breakdown voltage (BVGD) of -311.2 V, three-terminal drain-source breakdown voltage (BVDS) of 237 V at VGS= -10 V, and power-added efficiency of 39.9% at 2.4 GHz. A conventional Schottky-gate HFET and TiO2-dielectric MOS-HFET were also prepared in comparison. The present design has shown superior dc/RF device performance. It is suitable for high-power RF circuit applications.

AB - Novel Al2O3-dielectric InAlN/AlN/GaN Γ-Gate metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) with composite Al2O3/TiO2 passivation oxides formed by using ultrasonic spray pyrolysis deposition/RF sputtering, respectively, are investigated. The Γ-gate includes a 1-μm long active gate on the Al2O3 dielectric and a 1-μm long field-plate on the composite Al2O3/TiO2 oxides. The present Γ-Gate MOS-HFET has demonstrated excellent on/off current ratio (Ion/Ioff) of 8.2 × 1010, subthreshold swing of 102.3 mV/dec, maximum extrinsic transconductance of (gm,max) of 210.1 mS/mm, maximum drain-source saturation current density (IDS,max) of 868.3 mA/mm, two-terminal off-state gate-drain breakdown voltage (BVGD) of -311.2 V, three-terminal drain-source breakdown voltage (BVDS) of 237 V at VGS= -10 V, and power-added efficiency of 39.9% at 2.4 GHz. A conventional Schottky-gate HFET and TiO2-dielectric MOS-HFET were also prepared in comparison. The present design has shown superior dc/RF device performance. It is suitable for high-power RF circuit applications.

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