Al2O3-dielectric In0.18Al0.82N/AlN/GaN/Si metal-oxide-semiconductor heterostructure field-effect transistors with backside substrate metal-trench structure

Ching Sung Lee, Wei-Chou Hsu, Han Yin Liu, Yu Chang Chen

研究成果: Article

4 引文 (Scopus)

摘要

This paper investigates novel Al2O3-dielectric In0.18Al0.82N/AlN/GaN metal-oxidesemiconductor heterostructure field-effect transistors (MOS-HFETs) with backside metal-trench structure grown by using a non-vacuum ultrasonic spray pyrolysis deposition technique. 3-μm deep metal trenches coated with 150-nm thick Ni were formed on the backside of the Si substrate to improve the heat dissipation efficiency. The present In0.18Al0.82N/AlN/GaN MOS-HFET (Schottky-gate HFET) has demonstrated improved maximum drain.source current density (IDS,max) of 1.08 (0.86) A/mm at VDS = 8 V, gate-voltage swing of 4 (2) V, on/off-current ratio (Ion/Ioff) of 8.9 × 108 (7.4 × 104), subthreshold swing of 140 (244) mV/dec, two-terminal off-state gate-drain breakdown voltage (BVGD) of -191.1 (-173.8) V, turn-on voltage (Von) of 4.2 (1.2) V, and three-terminal on-state drain-source breakdown voltage (BVDS) of 155.9 (98.5) V. Enhanced power performances, including saturated output power (Pout) of 27.9 (21.5) dBm, power gain (Ga) of 20.3 (15.5) dB, and power-added efficiency (PAE) of 44.3% (34.8%), are achieved.

原文English
頁(從 - 到)68-73
頁數6
期刊IEEE Journal of the Electron Devices Society
6
發行號1
DOIs
出版狀態Published - 2018 一月 1

指紋

Semiconductors
High electron mobility transistors
Oxides
Metals
Substrates
Electric breakdown
Spray pyrolysis
Electric potential
Heat losses
Ultrasonics
Current density
Hot Temperature
Ions
Oxide semiconductors

All Science Journal Classification (ASJC) codes

  • Biotechnology
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

引用此文

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title = "Al2O3-dielectric In0.18Al0.82N/AlN/GaN/Si metal-oxide-semiconductor heterostructure field-effect transistors with backside substrate metal-trench structure",
abstract = "This paper investigates novel Al2O3-dielectric In0.18Al0.82N/AlN/GaN metal-oxidesemiconductor heterostructure field-effect transistors (MOS-HFETs) with backside metal-trench structure grown by using a non-vacuum ultrasonic spray pyrolysis deposition technique. 3-μm deep metal trenches coated with 150-nm thick Ni were formed on the backside of the Si substrate to improve the heat dissipation efficiency. The present In0.18Al0.82N/AlN/GaN MOS-HFET (Schottky-gate HFET) has demonstrated improved maximum drain.source current density (IDS,max) of 1.08 (0.86) A/mm at VDS = 8 V, gate-voltage swing of 4 (2) V, on/off-current ratio (Ion/Ioff) of 8.9 × 108 (7.4 × 104), subthreshold swing of 140 (244) mV/dec, two-terminal off-state gate-drain breakdown voltage (BVGD) of -191.1 (-173.8) V, turn-on voltage (Von) of 4.2 (1.2) V, and three-terminal on-state drain-source breakdown voltage (BVDS) of 155.9 (98.5) V. Enhanced power performances, including saturated output power (Pout) of 27.9 (21.5) dBm, power gain (Ga) of 20.3 (15.5) dB, and power-added efficiency (PAE) of 44.3{\%} (34.8{\%}), are achieved.",
author = "Lee, {Ching Sung} and Wei-Chou Hsu and Liu, {Han Yin} and Chen, {Yu Chang}",
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T1 - Al2O3-dielectric In0.18Al0.82N/AlN/GaN/Si metal-oxide-semiconductor heterostructure field-effect transistors with backside substrate metal-trench structure

AU - Lee, Ching Sung

AU - Hsu, Wei-Chou

AU - Liu, Han Yin

AU - Chen, Yu Chang

PY - 2018/1/1

Y1 - 2018/1/1

N2 - This paper investigates novel Al2O3-dielectric In0.18Al0.82N/AlN/GaN metal-oxidesemiconductor heterostructure field-effect transistors (MOS-HFETs) with backside metal-trench structure grown by using a non-vacuum ultrasonic spray pyrolysis deposition technique. 3-μm deep metal trenches coated with 150-nm thick Ni were formed on the backside of the Si substrate to improve the heat dissipation efficiency. The present In0.18Al0.82N/AlN/GaN MOS-HFET (Schottky-gate HFET) has demonstrated improved maximum drain.source current density (IDS,max) of 1.08 (0.86) A/mm at VDS = 8 V, gate-voltage swing of 4 (2) V, on/off-current ratio (Ion/Ioff) of 8.9 × 108 (7.4 × 104), subthreshold swing of 140 (244) mV/dec, two-terminal off-state gate-drain breakdown voltage (BVGD) of -191.1 (-173.8) V, turn-on voltage (Von) of 4.2 (1.2) V, and three-terminal on-state drain-source breakdown voltage (BVDS) of 155.9 (98.5) V. Enhanced power performances, including saturated output power (Pout) of 27.9 (21.5) dBm, power gain (Ga) of 20.3 (15.5) dB, and power-added efficiency (PAE) of 44.3% (34.8%), are achieved.

AB - This paper investigates novel Al2O3-dielectric In0.18Al0.82N/AlN/GaN metal-oxidesemiconductor heterostructure field-effect transistors (MOS-HFETs) with backside metal-trench structure grown by using a non-vacuum ultrasonic spray pyrolysis deposition technique. 3-μm deep metal trenches coated with 150-nm thick Ni were formed on the backside of the Si substrate to improve the heat dissipation efficiency. The present In0.18Al0.82N/AlN/GaN MOS-HFET (Schottky-gate HFET) has demonstrated improved maximum drain.source current density (IDS,max) of 1.08 (0.86) A/mm at VDS = 8 V, gate-voltage swing of 4 (2) V, on/off-current ratio (Ion/Ioff) of 8.9 × 108 (7.4 × 104), subthreshold swing of 140 (244) mV/dec, two-terminal off-state gate-drain breakdown voltage (BVGD) of -191.1 (-173.8) V, turn-on voltage (Von) of 4.2 (1.2) V, and three-terminal on-state drain-source breakdown voltage (BVDS) of 155.9 (98.5) V. Enhanced power performances, including saturated output power (Pout) of 27.9 (21.5) dBm, power gain (Ga) of 20.3 (15.5) dB, and power-added efficiency (PAE) of 44.3% (34.8%), are achieved.

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