Al2O3-passivated graded-barrier AlxGa1-xN/AlN/GaN/Si heterostructure field-effect transistor by hydrogen peroxide oxidization method

Ching Sung Lee, Wei Chou Hsu, Han Yin Liu, Shen Ting Yang

研究成果: Article

1 引文 (Scopus)

摘要

This letter reports a novel Al2O3-passivated graded-barrier (GB) AlxGa1-xN/AlN/GaN/Si heterostructure field-effect transistor (HFET) formed by using hydrogen peroxide (H2O2) oxidization method. Different from the Al0.26Ga0.74N conventional barrier (CB), a compositionally graded AlxGa1-xN (x = 0.22∼0.3) barrier was devised to increase the Schottky-barrier height (B) and improve the interfacial quality at the same time. Reduced gate leakage and enhanced device gain are further achieved by the Al2O3 passivation. The present Al2O3-passivated/unpassivated GB-HFETs (unpassivated CB-HFET) has demonstrated improved maximum drain-source current density (IDS, max) of 708/699 (654) mA/mm at VDS = 7 V, maximum extrinsic transconductance (gm, max) of 139/126 (113) mS/mm, subthreshold swing (SS) of 176/253 (274) mV/dec, on/off-current ratio (Ion/Ioff) of 3.8 × 106/1.4 × 104 (7.1 × 103), two-terminal off-state gate-drain breakdown voltage (BVGD) of −126.4/−96.8 (−89.3) V, turn-on voltage (Von) of 1.1/0.7 (0.3) V, and three-terminal on-state drain-source breakdown voltage (BVDS) of 109/89 (71) V.

原文English
頁(從 - 到)Q166-Q170
期刊ECS Journal of Solid State Science and Technology
6
發行號12
DOIs
出版狀態Published - 2017 一月 1

指紋

High electron mobility transistors
Electric breakdown
Hydrogen peroxide
Hydrogen Peroxide
Transconductance
Passivation
Current density
Ions
Electric potential

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

引用此文

@article{3f67c70721f94e7394db0608f03e99a5,
title = "Al2O3-passivated graded-barrier AlxGa1-xN/AlN/GaN/Si heterostructure field-effect transistor by hydrogen peroxide oxidization method",
abstract = "This letter reports a novel Al2O3-passivated graded-barrier (GB) AlxGa1-xN/AlN/GaN/Si heterostructure field-effect transistor (HFET) formed by using hydrogen peroxide (H2O2) oxidization method. Different from the Al0.26Ga0.74N conventional barrier (CB), a compositionally graded AlxGa1-xN (x = 0.22∼0.3) barrier was devised to increase the Schottky-barrier height (B) and improve the interfacial quality at the same time. Reduced gate leakage and enhanced device gain are further achieved by the Al2O3 passivation. The present Al2O3-passivated/unpassivated GB-HFETs (unpassivated CB-HFET) has demonstrated improved maximum drain-source current density (IDS, max) of 708/699 (654) mA/mm at VDS = 7 V, maximum extrinsic transconductance (gm, max) of 139/126 (113) mS/mm, subthreshold swing (SS) of 176/253 (274) mV/dec, on/off-current ratio (Ion/Ioff) of 3.8 × 106/1.4 × 104 (7.1 × 103), two-terminal off-state gate-drain breakdown voltage (BVGD) of −126.4/−96.8 (−89.3) V, turn-on voltage (Von) of 1.1/0.7 (0.3) V, and three-terminal on-state drain-source breakdown voltage (BVDS) of 109/89 (71) V.",
author = "Lee, {Ching Sung} and Hsu, {Wei Chou} and Liu, {Han Yin} and Yang, {Shen Ting}",
year = "2017",
month = "1",
day = "1",
doi = "10.1149/2.0341712jss",
language = "English",
volume = "6",
pages = "Q166--Q170",
journal = "ECS Journal of Solid State Science and Technology",
issn = "2162-8769",
publisher = "Electrochemical Society, Inc.",
number = "12",

}

TY - JOUR

T1 - Al2O3-passivated graded-barrier AlxGa1-xN/AlN/GaN/Si heterostructure field-effect transistor by hydrogen peroxide oxidization method

AU - Lee, Ching Sung

AU - Hsu, Wei Chou

AU - Liu, Han Yin

AU - Yang, Shen Ting

PY - 2017/1/1

Y1 - 2017/1/1

N2 - This letter reports a novel Al2O3-passivated graded-barrier (GB) AlxGa1-xN/AlN/GaN/Si heterostructure field-effect transistor (HFET) formed by using hydrogen peroxide (H2O2) oxidization method. Different from the Al0.26Ga0.74N conventional barrier (CB), a compositionally graded AlxGa1-xN (x = 0.22∼0.3) barrier was devised to increase the Schottky-barrier height (B) and improve the interfacial quality at the same time. Reduced gate leakage and enhanced device gain are further achieved by the Al2O3 passivation. The present Al2O3-passivated/unpassivated GB-HFETs (unpassivated CB-HFET) has demonstrated improved maximum drain-source current density (IDS, max) of 708/699 (654) mA/mm at VDS = 7 V, maximum extrinsic transconductance (gm, max) of 139/126 (113) mS/mm, subthreshold swing (SS) of 176/253 (274) mV/dec, on/off-current ratio (Ion/Ioff) of 3.8 × 106/1.4 × 104 (7.1 × 103), two-terminal off-state gate-drain breakdown voltage (BVGD) of −126.4/−96.8 (−89.3) V, turn-on voltage (Von) of 1.1/0.7 (0.3) V, and three-terminal on-state drain-source breakdown voltage (BVDS) of 109/89 (71) V.

AB - This letter reports a novel Al2O3-passivated graded-barrier (GB) AlxGa1-xN/AlN/GaN/Si heterostructure field-effect transistor (HFET) formed by using hydrogen peroxide (H2O2) oxidization method. Different from the Al0.26Ga0.74N conventional barrier (CB), a compositionally graded AlxGa1-xN (x = 0.22∼0.3) barrier was devised to increase the Schottky-barrier height (B) and improve the interfacial quality at the same time. Reduced gate leakage and enhanced device gain are further achieved by the Al2O3 passivation. The present Al2O3-passivated/unpassivated GB-HFETs (unpassivated CB-HFET) has demonstrated improved maximum drain-source current density (IDS, max) of 708/699 (654) mA/mm at VDS = 7 V, maximum extrinsic transconductance (gm, max) of 139/126 (113) mS/mm, subthreshold swing (SS) of 176/253 (274) mV/dec, on/off-current ratio (Ion/Ioff) of 3.8 × 106/1.4 × 104 (7.1 × 103), two-terminal off-state gate-drain breakdown voltage (BVGD) of −126.4/−96.8 (−89.3) V, turn-on voltage (Von) of 1.1/0.7 (0.3) V, and three-terminal on-state drain-source breakdown voltage (BVDS) of 109/89 (71) V.

UR - http://www.scopus.com/inward/record.url?scp=85047158727&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85047158727&partnerID=8YFLogxK

U2 - 10.1149/2.0341712jss

DO - 10.1149/2.0341712jss

M3 - Article

AN - SCOPUS:85047158727

VL - 6

SP - Q166-Q170

JO - ECS Journal of Solid State Science and Technology

JF - ECS Journal of Solid State Science and Technology

SN - 2162-8769

IS - 12

ER -