Alternating current bias-assisted photoenhanced oxidation of n-GaN in dionized water

T. H. Hsueh, W. C. Lai, C. Y. Yeh, J. K. Sheu, L. C. Peng, K. H. Chang, S. E. Wu, C. P. Liu, Baptiste Gault, Simon P. Ringer

研究成果: Conference contribution

1 引文 (Scopus)

摘要

Patterned oxidation of n-GaN in water at room temperature is achieved by using an imprint technique and an alternating current (ac) bias-assisted photoelectrochemical process. Mold is fabricated by a double-side polished sapphire coated with indium tin oxide thin film to be an electrode for electric conduction and allow the high transparency for ultraviolet light. The growth rate of gallium oxide-based material of around 12 nm/min could be achieved when an ac bias of 3 V with a duty cycle of 90% was applied to the system. The film is determined by high-resolution transmission electron microscopy and selected area electron diffraction pattern.

原文English
主出版物標題Proceedings of the 2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08
頁面1-3
頁數3
DOIs
出版狀態Published - 2008 十二月 1
事件2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08 - Sydney, NSW, Australia
持續時間: 2008 七月 282008 八月 1

出版系列

名字Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Other

Other2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08
國家Australia
城市Sydney, NSW
期間08-07-2808-08-01

指紋

Bias currents
Oxidation
Water
Aluminum Oxide
Gallium
High resolution transmission electron microscopy
Tin oxides
Sapphire
Electron diffraction
Transparency
Indium
Diffraction patterns
Oxide films
Thin films
Electrodes
Oxides
Temperature
Ultraviolet Rays
indium tin oxide
gallium oxide

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

引用此文

Hsueh, T. H., Lai, W. C., Yeh, C. Y., Sheu, J. K., Peng, L. C., Chang, K. H., ... Ringer, S. P. (2008). Alternating current bias-assisted photoenhanced oxidation of n-GaN in dionized water. 於 Proceedings of the 2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08 (頁 1-3). [4802077] (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). https://doi.org/10.1109/COMMAD.2008.4802077
Hsueh, T. H. ; Lai, W. C. ; Yeh, C. Y. ; Sheu, J. K. ; Peng, L. C. ; Chang, K. H. ; Wu, S. E. ; Liu, C. P. ; Gault, Baptiste ; Ringer, Simon P. / Alternating current bias-assisted photoenhanced oxidation of n-GaN in dionized water. Proceedings of the 2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08. 2008. 頁 1-3 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD).
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Hsueh, TH, Lai, WC, Yeh, CY, Sheu, JK, Peng, LC, Chang, KH, Wu, SE, Liu, CP, Gault, B & Ringer, SP 2008, Alternating current bias-assisted photoenhanced oxidation of n-GaN in dionized water. 於 Proceedings of the 2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08., 4802077, Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, 頁 1-3, 2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08, Sydney, NSW, Australia, 08-07-28. https://doi.org/10.1109/COMMAD.2008.4802077

Alternating current bias-assisted photoenhanced oxidation of n-GaN in dionized water. / Hsueh, T. H.; Lai, W. C.; Yeh, C. Y.; Sheu, J. K.; Peng, L. C.; Chang, K. H.; Wu, S. E.; Liu, C. P.; Gault, Baptiste; Ringer, Simon P.

Proceedings of the 2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08. 2008. p. 1-3 4802077 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD).

研究成果: Conference contribution

TY - GEN

T1 - Alternating current bias-assisted photoenhanced oxidation of n-GaN in dionized water

AU - Hsueh, T. H.

AU - Lai, W. C.

AU - Yeh, C. Y.

AU - Sheu, J. K.

AU - Peng, L. C.

AU - Chang, K. H.

AU - Wu, S. E.

AU - Liu, C. P.

AU - Gault, Baptiste

AU - Ringer, Simon P.

PY - 2008/12/1

Y1 - 2008/12/1

N2 - Patterned oxidation of n-GaN in water at room temperature is achieved by using an imprint technique and an alternating current (ac) bias-assisted photoelectrochemical process. Mold is fabricated by a double-side polished sapphire coated with indium tin oxide thin film to be an electrode for electric conduction and allow the high transparency for ultraviolet light. The growth rate of gallium oxide-based material of around 12 nm/min could be achieved when an ac bias of 3 V with a duty cycle of 90% was applied to the system. The film is determined by high-resolution transmission electron microscopy and selected area electron diffraction pattern.

AB - Patterned oxidation of n-GaN in water at room temperature is achieved by using an imprint technique and an alternating current (ac) bias-assisted photoelectrochemical process. Mold is fabricated by a double-side polished sapphire coated with indium tin oxide thin film to be an electrode for electric conduction and allow the high transparency for ultraviolet light. The growth rate of gallium oxide-based material of around 12 nm/min could be achieved when an ac bias of 3 V with a duty cycle of 90% was applied to the system. The film is determined by high-resolution transmission electron microscopy and selected area electron diffraction pattern.

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Hsueh TH, Lai WC, Yeh CY, Sheu JK, Peng LC, Chang KH 等. Alternating current bias-assisted photoenhanced oxidation of n-GaN in dionized water. 於 Proceedings of the 2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08. 2008. p. 1-3. 4802077. (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). https://doi.org/10.1109/COMMAD.2008.4802077