Alternating current bias-assisted photoenhanced oxidation of n-GaN in dionized water

T. H. Hsueh, W. C. Lai, C. Y. Yeh, J. K. Sheu, L. C. Peng, K. H. Chang, S. E. Wu, C. P. Liu, Baptiste Gault, Simon P. Ringer

研究成果: Conference contribution

1 引文 斯高帕斯(Scopus)

摘要

Patterned oxidation of n-GaN in water at room temperature is achieved by using an imprint technique and an alternating current (ac) bias-assisted photoelectrochemical process. Mold is fabricated by a double-side polished sapphire coated with indium tin oxide thin film to be an electrode for electric conduction and allow the high transparency for ultraviolet light. The growth rate of gallium oxide-based material of around 12 nm/min could be achieved when an ac bias of 3 V with a duty cycle of 90% was applied to the system. The film is determined by high-resolution transmission electron microscopy and selected area electron diffraction pattern.

原文English
主出版物標題Proceedings of the 2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08
頁面1-3
頁數3
DOIs
出版狀態Published - 2008 十二月 1
事件2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08 - Sydney, NSW, Australia
持續時間: 2008 七月 282008 八月 1

出版系列

名字Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Other

Other2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08
國家/地區Australia
城市Sydney, NSW
期間08-07-2808-08-01

All Science Journal Classification (ASJC) codes

  • 電氣與電子工程
  • 電子、光磁材料

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