Aluminum electrode modulated bipolar resistive switching of Al/fuel-assisted NiO x/ITO memory devices modeled with a dual-oxygen-reservoir structure

Kun Keng Chiang, Jen-Sue Chen, Jih-Jen Wu

研究成果: Article同行評審

36 引文 斯高帕斯(Scopus)

摘要

Bipolar resistive switching in Al/fuel-assisted NiO x (40 nm)/ITO devices is demonstrated in this work. XPS analysis reveals the simultaneous presence of metallic Ni, Ni 2O 3, and NiO components in the fuel-assisted NiO x. The concentration, as well as spreading of the metallic Ni and accompanying oxygen vacancies, are related to the Al/NiO x interfacial reaction, which is enhanced by the increasing thickness of the Al top electrode. Correspondingly, the preswitching-on voltage decreases while the preswitching-off voltage increases with increasing thickness (from 15 to 60 nm) of Al. However, in regular switching operation, set and reset voltages are considerably lowered for devices with an increased thickness of the Al top electrode. The bipolar resistive switching behaviors of Al/fuel-assisted NiO x/ITO devices are therefore discussed based on the formation of conductive paths and their correlation with the Al-electrode modulated composition in the fuel-assisted NiO x. The Al/NiO x interfacial reaction region pairs with ITO to form a dual-oxygen-reservoir structure. Mechanisms of construction/destruction of conducting paths originating from the electrochemical redox reactions at the interface between NiO x, and the dual oxygen reservoirs will also be explicated.

原文English
頁(從 - 到)4237-4245
頁數9
期刊ACS Applied Materials and Interfaces
4
發行號8
DOIs
出版狀態Published - 2012 八月 22

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

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