Aluminum-free InGaAs/GaAs/InGaP strained-quantum-well lasers with InGaAsP transition layers

Hung Pin Shiao, Wei Lin, Jian Guan Chen, Yuan Kuag Tu, Ching Ting Lee

研究成果: Conference article

1 引文 斯高帕斯(Scopus)

摘要

Aluminum-free InGaAs/GaAs/InGaP strained quantum well laser with high characteristic temperature of 170 K is reported. The as-cleaved lasers with InGaAsP transition layers show internal quantum efficiency of 87% and internal waveguide loss of 6.33 cm-1.

原文English
頁(從 - 到)121-122
頁數2
期刊Conference Digest - IEEE International Semiconductor Laser Conference
出版狀態Published - 1994 十二月 1
事件Proceedings of the 1994 14th International Semiconductor Laser Conference - Maui, HI, USA
持續時間: 1994 九月 191994 九月 23

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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