Aluminum-free InGaAs/GaAs/InGaP strained-quantum-well lasers with InGaAsP transition layers

Hung Pin Shiao; Wei Lin; Jian Guan Chen; Yuan Kuag Tu; Ching Ting Lee

Aluminum-free InGaAs/GaAs/InGaP strained-quantum-well lasers with InGaAsP transition layers

Hung Pin Shiao
, Wei Lin
, Jian Guan Chen
, Yuan Kuag Tu
, Ching Ting Lee

光電科學與工程學系

研究成果: Conference article › 同行評審

1 引文斯高帕斯（Scopus）

摘要

Aluminum-free InGaAs/GaAs/InGaP strained quantum well laser with high characteristic temperature of 170 K is reported. The as-cleaved lasers with InGaAsP transition layers show internal quantum efficiency of 87% and internal waveguide loss of 6.33 cm^-1.

原文	English
頁（從 - 到）	121-122
頁數	2
期刊	Conference Digest - IEEE International Semiconductor Laser Conference
出版狀態	Published - 1994
事件	Proceedings of the 1994 14th International Semiconductor Laser Conference - Maui, HI, USA 持續時間: 1994 9月 19 → 1994 9月 23

All Science Journal Classification (ASJC) codes

原子與分子物理與光學
電氣與電子工程

其它文件與鏈接

Link to publication in Scopus

引用此

@article{959000fb8b0b4d3998ad954414c1c8de,

title = "Aluminum-free InGaAs/GaAs/InGaP strained-quantum-well lasers with InGaAsP transition layers",

abstract = "Aluminum-free InGaAs/GaAs/InGaP strained quantum well laser with high characteristic temperature of 170 K is reported. The as-cleaved lasers with InGaAsP transition layers show internal quantum efficiency of 87\% and internal waveguide loss of 6.33 cm-1.",

author = "Shiao, \{Hung Pin\} and Wei Lin and Chen, \{Jian Guan\} and Tu, \{Yuan Kuag\} and Lee, \{Ching Ting\}",

year = "1994",

language = "English",

pages = "121--122",

journal = "Conference Digest - IEEE International Semiconductor Laser Conference",

issn = "0899-9406",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1994 14th International Semiconductor Laser Conference ; Conference date: 19-09-1994 Through 23-09-1994",

}

TY - JOUR

T1 - Aluminum-free InGaAs/GaAs/InGaP strained-quantum-well lasers with InGaAsP transition layers

AU - Shiao, Hung Pin

AU - Lin, Wei

AU - Chen, Jian Guan

AU - Tu, Yuan Kuag

AU - Lee, Ching Ting

PY - 1994

Y1 - 1994

N2 - Aluminum-free InGaAs/GaAs/InGaP strained quantum well laser with high characteristic temperature of 170 K is reported. The as-cleaved lasers with InGaAsP transition layers show internal quantum efficiency of 87% and internal waveguide loss of 6.33 cm-1.

AB - Aluminum-free InGaAs/GaAs/InGaP strained quantum well laser with high characteristic temperature of 170 K is reported. The as-cleaved lasers with InGaAsP transition layers show internal quantum efficiency of 87% and internal waveguide loss of 6.33 cm-1.

UR - https://www.scopus.com/pages/publications/0028714928

UR - https://www.scopus.com/pages/publications/0028714928#tab=citedBy

M3 - Conference article

AN - SCOPUS:0028714928

SN - 0899-9406

SP - 121

EP - 122

JO - Conference Digest - IEEE International Semiconductor Laser Conference

JF - Conference Digest - IEEE International Semiconductor Laser Conference

T2 - Proceedings of the 1994 14th International Semiconductor Laser Conference

Y2 - 19 September 1994 through 23 September 1994

ER -

Aluminum-free InGaAs/GaAs/InGaP strained-quantum-well lasers with InGaAsP transition layers

摘要

All Science Journal Classification (ASJC) codes

其它文件與鏈接

指紋

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