Ambient constancy of passivation-free ultra-thin zinc tin oxide thin film transistor

Li Chih Liu, Jen Sue Chen, Jiann Shing Jeng

研究成果: Article同行評審

9 引文 斯高帕斯(Scopus)

摘要

An ultra-thin (5 nm-thick), unpassivated zinc tin oxide (ZTO) thin-film transistor TFT, fabricated with solution process, exhibits a good field-effect mobility (13 ∼ 14 cm2/Vs), small subthreshold swing (∼0.30 V/dec.) and high on/off current ratio (∼108). The field-effect mobility can be further enhanced by increasing the ZTOthickness to 12 nm and 22 nm. Furthermore, ID-VG characteristics of the 5 nm-thick ZTO TFT remain unaffected, regardless of working in air (60% relative humidity), vacuum or dry O2 atmosphere. The dissimilar TFT characteristics are discussed in terms of oxygen deficiency content, as well as the Fermi level position (EF to EC) for ZTO of various thicknesses to explain the moisture immunity of the 5 nm-thick solution-processed ZTO TFT.

原文English
頁(從 - 到)Q59-Q62
期刊ECS Solid State Letters
4
發行號12
DOIs
出版狀態Published - 2015 一月 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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