Ambipolar characteristics of the polyaniline-poly(styrene sulfonic acid)-based organic thin film transistor via poly(vinyl alcohol) interface modification

Yu Chang Li; Yu Ju Lin; Chia Yu Wei; Yeong Her Wang

doi:10.1016/j.sse.2012.02.011

Ambipolar characteristics of the polyaniline-poly(styrene sulfonic acid)-based organic thin film transistor via poly(vinyl alcohol) interface modification

Yu Chang Li, Yu Ju Lin, Chia Yu Wei, Yeong Her Wang

研究成果: Article › 同行評審

3 引文斯高帕斯（Scopus）

摘要

The ambipolar characteristics of polyaniline-poly(styrene sulfonic acid) (PANI-PSS)-based organic thin film transistor (OTFT) via poly(vinyl alcohol) surface modification were demonstrated. Through ion-assisted electrochemical doping, the PANI-PSS-based OTFT shows the unobvious ambipolar operation caused by the incompatibility interface between water-soluble PANI-PSS and poly(4-vinylphenol) dielectrics. With appropriate control of the interface conditions, the ambipolar characteristics of OTFTs can be enhanced significantly. Hole mobility can be increased from 0.65 to 3.36 cm²/V s while electron mobility is at 1.19 cm²/V s.

原文	English
頁（從 - 到）	56-59
頁數	4
期刊	Solid-State Electronics
卷	79
DOIs	https://doi.org/10.1016/j.sse.2012.02.011
出版狀態	Published - 2013 一月

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/j.sse.2012.02.011

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abstract = "The ambipolar characteristics of polyaniline-poly(styrene sulfonic acid) (PANI-PSS)-based organic thin film transistor (OTFT) via poly(vinyl alcohol) surface modification were demonstrated. Through ion-assisted electrochemical doping, the PANI-PSS-based OTFT shows the unobvious ambipolar operation caused by the incompatibility interface between water-soluble PANI-PSS and poly(4-vinylphenol) dielectrics. With appropriate control of the interface conditions, the ambipolar characteristics of OTFTs can be enhanced significantly. Hole mobility can be increased from 0.65 to 3.36 cm2/V s while electron mobility is at 1.19 cm2/V s.",

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