Ammonia gas sensing performance of an indium tin oxide (ITO) based device with an underlying au-nanodot layer

Chi Shiang Hsu, Huey Ing Chen, Cheng Wei Lin, Tai You Chen, Chien Chang Huang, Po Cheng Chou, Wen Chau Liu

研究成果: Article同行評審

9 引文 斯高帕斯(Scopus)

摘要

The temperature-dependent ammonia gas sensing performance of an interesting indium tin oxide (ITO) based device with an underlying Au-nanodot layer (ITO-Au) is studied and demonstrated. The studied ITO-Au device exhibits good ammonia gas sensing performance and widespread ammonia gas concentration regime. The optimal operation temperature of the studied ITO-Au device is 150?C. The studied ITO-Au device exhibits the benefit of improved sensing performance and extremely low ammonia gas concentration detecting ability. For example, under introduced 1000 ppm and 175 ppb NH3/air gases, the studied ITO-Au device demonstrates remarkable sensitivity ratios of 1786% and 98%, respectively, at 150?C. The related transient responses are also studied. The enhanced sensing performance of the studied ITO-Au device is primarily caused by the presented rougher surface which gives to the increased effective adsorption area. Experimentally, the studied ITO-Au device reveals advantages of simple structure, ease of fabrication, high sensing response, extremely low ammonia gas detecting limit, and low temperature operation capability.

原文English
頁(從 - 到)B17-B22
期刊Journal of the Electrochemical Society
160
發行號2
DOIs
出版狀態Published - 2013 四月 2

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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