@article{c901ca609422436a8b482cd78b957d82,
title = "Ammonia Sensing Characteristics of a Platinum (Pt) Hybrid Structure/GaN-Based Schottky Diode",
abstract = "A hybrid structure of platinum nanoparticles (Pt NPs) and a Pt thin film are employed to fabricate a new Pt NP/Pt thin film/GaN-based Schottky diode-type ammonia sensor. Pt NPs are formed by a drop coating and UV illumination approach. The increased surface-area-to-volume ratio and {"}spillover{"} effect of Pt NPs are beneficial in ammonia sensing. Due to the synergistic catalytic activity of Pt NPs and Pt thin film, the studied device shows good ammonia sensing properties, including a high sensing response of 522.1 under 1000-ppm NH3/air gas at 473 K and an extremely low detecting level of 0.4-ppm NH3/air. A thermodynamic analysis is employed to study the related ammonia sensing mechanism. Furthermore, a Kalman filter and the related algorithm are introduced to effectively reduce the redundant data without affecting the original sensing results. Based on the good performance and advantages of a relatively simple structure and easy fabrication, the studied device is promising for ammonia sensing and wireless transmission applications.",
author = "Chang, {Ching Hong} and Chen, {Wei Cheng} and Niu, {Jing Shiuan} and Ke, {Bu Yuan} and Cheng, {Shiou Ying} and Lin, {Kun Wei} and Liu, {Wen Chau}",
note = "Funding Information: Manuscript received September 22, 2019; revised October 27, 2019; accepted November 10, 2019. Date of publication December 9, 2019; date of current version December 30, 2019. This work was supported in part by the Ministry of Science and Technology of the People{\textquoteright}s Republic of China under Contract MOST 108-221-E-006-045, in part by the Chaoyang University of Technology, and in part by the Ministry of Education of the People{\textquoteright}s Republic of China through the Higher Education Sprout Project (The Research and Development and the Cultivation of Talent for Health-Enhancement Products). The review of this article was arranged by Editor I. Kymissis. (Corresponding authors: Kun-Wei Lin; Wen-Chau Liu.) C.-H. Chang, W.-C. Chen, J.-S. Niu, B.-Y. Ke, and W.-C. Liu are with the Department of Electrical Engineering, Institute of Microelectronics, National Cheng Kung University, Tainan 70101, Taiwan (e-mail: wcliu@mail.ncku.edu.tw). Publisher Copyright: {\textcopyright} 2019 IEEE.",
year = "2020",
month = jan,
doi = "10.1109/TED.2019.2953703",
language = "English",
volume = "67",
pages = "296--303",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "1",
}