Ammonia sensing characteristics of a Pt/AlGaN/GaN Schottky diode

Tai You Chen; Huey Ing Chen; Yi Jung Liu; Chien Chang Huang; Chi Shiang Hsu; Chung Fu Chang; Wen Chau Liu

doi:10.1016/j.snb.2010.11.022

Ammonia sensing characteristics of a Pt/AlGaN/GaN Schottky diode

Tai You Chen, Huey Ing Chen, Yi Jung Liu, Chien Chang Huang, Chi Shiang Hsu, Chung Fu Chang, Wen Chau Liu

研究成果: Article › 同行評審

27 引文斯高帕斯（Scopus）

摘要

The interesting ammonia sensing current-voltage (I-V) characteristics of a Pt/AlGaN/GaN Schottky diode are firstly studied and demonstrated. It is found that the ammonia sensitivity is increased by increasing the temperature. Yet, the sensitivity is decreased when the temperature is higher than 423 K. Experimentally, the studied device exhibits a good sensitivity of 13.1 under exposing to a relatively low concentration ammonia gas of 35 ppm NH ₃/air. In addition, the good sensing performance of the studied device is demonstrated over a wide operating temperature regime from 298 K to 473 K. A highest ammonia sensing response of 182.7 is found at 423 K while a 10,000 ppm NH₃/air gas is introduced. Crown

原文	English
頁（從 - 到）	347-350
頁數	4
期刊	Sensors and Actuators, B: Chemical
卷	155
發行號	1
DOIs	https://doi.org/10.1016/j.snb.2010.11.022
出版狀態	Published - 2011 7月 5

All Science Journal Classification (ASJC) codes

電子、光磁材料
儀器
凝聚態物理學
表面、塗料和薄膜
金屬和合金
電氣與電子工程
材料化學

存取文件

10.1016/j.snb.2010.11.022

其它文件與鏈接

引用此

@article{b1d96b23b9cc4a0b82eba068bb116d04,

title = "Ammonia sensing characteristics of a Pt/AlGaN/GaN Schottky diode",

abstract = "The interesting ammonia sensing current-voltage (I-V) characteristics of a Pt/AlGaN/GaN Schottky diode are firstly studied and demonstrated. It is found that the ammonia sensitivity is increased by increasing the temperature. Yet, the sensitivity is decreased when the temperature is higher than 423 K. Experimentally, the studied device exhibits a good sensitivity of 13.1 under exposing to a relatively low concentration ammonia gas of 35 ppm NH 3/air. In addition, the good sensing performance of the studied device is demonstrated over a wide operating temperature regime from 298 K to 473 K. A highest ammonia sensing response of 182.7 is found at 423 K while a 10,000 ppm NH3/air gas is introduced. Crown",

author = "Chen, {Tai You} and Chen, {Huey Ing} and Liu, {Yi Jung} and Huang, {Chien Chang} and Hsu, {Chi Shiang} and Chang, {Chung Fu} and Liu, {Wen Chau}",

note = "Funding Information: This work was supported in part by the National Science Council of the Republic of China under contract no. NSC-97-2221-E-006-237-MY3 . Copyright: Copyright 2011 Elsevier B.V., All rights reserved.",

year = "2011",

month = jul,

day = "5",

doi = "10.1016/j.snb.2010.11.022",

language = "English",

volume = "155",

pages = "347--350",

journal = "Sensors and Actuators B: Chemical",

issn = "0925-4005",

publisher = "Elsevier",

number = "1",

}

TY - JOUR

T1 - Ammonia sensing characteristics of a Pt/AlGaN/GaN Schottky diode

AU - Chen, Tai You

AU - Chen, Huey Ing

AU - Liu, Yi Jung

AU - Huang, Chien Chang

AU - Hsu, Chi Shiang

AU - Chang, Chung Fu

AU - Liu, Wen Chau

N1 - Funding Information: This work was supported in part by the National Science Council of the Republic of China under contract no. NSC-97-2221-E-006-237-MY3 . Copyright: Copyright 2011 Elsevier B.V., All rights reserved.

PY - 2011/7/5

Y1 - 2011/7/5

N2 - The interesting ammonia sensing current-voltage (I-V) characteristics of a Pt/AlGaN/GaN Schottky diode are firstly studied and demonstrated. It is found that the ammonia sensitivity is increased by increasing the temperature. Yet, the sensitivity is decreased when the temperature is higher than 423 K. Experimentally, the studied device exhibits a good sensitivity of 13.1 under exposing to a relatively low concentration ammonia gas of 35 ppm NH 3/air. In addition, the good sensing performance of the studied device is demonstrated over a wide operating temperature regime from 298 K to 473 K. A highest ammonia sensing response of 182.7 is found at 423 K while a 10,000 ppm NH3/air gas is introduced. Crown

AB - The interesting ammonia sensing current-voltage (I-V) characteristics of a Pt/AlGaN/GaN Schottky diode are firstly studied and demonstrated. It is found that the ammonia sensitivity is increased by increasing the temperature. Yet, the sensitivity is decreased when the temperature is higher than 423 K. Experimentally, the studied device exhibits a good sensitivity of 13.1 under exposing to a relatively low concentration ammonia gas of 35 ppm NH 3/air. In addition, the good sensing performance of the studied device is demonstrated over a wide operating temperature regime from 298 K to 473 K. A highest ammonia sensing response of 182.7 is found at 423 K while a 10,000 ppm NH3/air gas is introduced. Crown

UR - http://www.scopus.com/inward/record.url?scp=79956368556&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79956368556&partnerID=8YFLogxK

U2 - 10.1016/j.snb.2010.11.022

DO - 10.1016/j.snb.2010.11.022

M3 - Article

AN - SCOPUS:79956368556

VL - 155

SP - 347

EP - 350

JO - Sensors and Actuators B: Chemical

JF - Sensors and Actuators B: Chemical

SN - 0925-4005

IS - 1

ER -

Ammonia sensing characteristics of a Pt/AlGaN/GaN Schottky diode

摘要

All Science Journal Classification (ASJC) codes

存取文件

其它文件與鏈接

指紋

引用此