Ammonia sensing characteristics of a Pt/AlGaN/GaN Schottky diode

Tai You Chen; Huey Ing Chen; Yi Jung Liu; Chien Chang Huang; Chi Shiang Hsu; Chung Fu Chang; Wen Chau Liu

doi:10.1016/j.snb.2010.11.022

Ammonia sensing characteristics of a Pt/AlGaN/GaN Schottky diode

Tai You Chen, Huey Ing Chen, Yi Jung Liu, Chien Chang Huang, Chi Shiang Hsu, Chung Fu Chang, Wen Chau Liu

研究成果: Article › 同行評審

20 引文斯高帕斯（Scopus）

摘要

The interesting ammonia sensing current-voltage (I-V) characteristics of a Pt/AlGaN/GaN Schottky diode are firstly studied and demonstrated. It is found that the ammonia sensitivity is increased by increasing the temperature. Yet, the sensitivity is decreased when the temperature is higher than 423 K. Experimentally, the studied device exhibits a good sensitivity of 13.1 under exposing to a relatively low concentration ammonia gas of 35 ppm NH ₃/air. In addition, the good sensing performance of the studied device is demonstrated over a wide operating temperature regime from 298 K to 473 K. A highest ammonia sensing response of 182.7 is found at 423 K while a 10,000 ppm NH₃/air gas is introduced. Crown

原文	English
頁（從 - 到）	347-350
頁數	4
期刊	Sensors and Actuators, B: Chemical
卷	155
發行號	1
DOIs	https://doi.org/10.1016/j.snb.2010.11.022
出版狀態	Published - 2011 七月 5

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Instrumentation
Condensed Matter Physics
Surfaces, Coatings and Films
Metals and Alloys
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/j.snb.2010.11.022

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AU - Chang, Chung Fu

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