Ammonia sensing characteristics of a Pt/AlGaN/GaN Schottky diode

Tai You Chen, Huey Ing Chen, Yi Jung Liu, Chien Chang Huang, Chi Shiang Hsu, Chung Fu Chang, Wen Chau Liu

研究成果: Article同行評審

20 引文 斯高帕斯(Scopus)


The interesting ammonia sensing current-voltage (I-V) characteristics of a Pt/AlGaN/GaN Schottky diode are firstly studied and demonstrated. It is found that the ammonia sensitivity is increased by increasing the temperature. Yet, the sensitivity is decreased when the temperature is higher than 423 K. Experimentally, the studied device exhibits a good sensitivity of 13.1 under exposing to a relatively low concentration ammonia gas of 35 ppm NH 3/air. In addition, the good sensing performance of the studied device is demonstrated over a wide operating temperature regime from 298 K to 473 K. A highest ammonia sensing response of 182.7 is found at 423 K while a 10,000 ppm NH3/air gas is introduced. Crown

頁(從 - 到)347-350
期刊Sensors and Actuators, B: Chemical
出版狀態Published - 2011 七月 5

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering
  • Materials Chemistry

指紋 深入研究「Ammonia sensing characteristics of a Pt/AlGaN/GaN Schottky diode」主題。共同形成了獨特的指紋。