TY - JOUR
T1 - Ammonia sensing characteristics of sputtered indium tin oxide (ITO) thin films on quartz and sapphire substrates
AU - Lin, Cheng Wei
AU - Chen, Huey Ing
AU - Chen, Tai You
AU - Huang, Chien Chang
AU - Hsu, Chi Shiang
AU - Liu, Wen Chau
N1 - Funding Information:
Manuscript received April 16, 2011; revised June 2, 2011 and July 15, 2011; accepted August 28, 2011. Date of publication September 29, 2011; date of current version November 23, 2011. This work was supported by the National Science Council of the Republic of China under Contract NSC-97-2221-E-006-237-MY3. The review of this paper was arranged by Editor A. M. Ionescu.
PY - 2011/12
Y1 - 2011/12
N2 - Indium tin oxide (ITO) thin-film-based ammonia sensors on sapphire and quartz substrates, fabricated by radio-frequency sputtering with substrate heated treatments, are studied and demonstrated. Experimentally, good NH 3 sensing properties of ITO thin films deposited on a quartz substrate, with a substrate temperature Ts of 100 °C, including a high sensitivity ratio of 2312%, and fast response and recovery times of 73 and 104 s upon the introduction of a 1000-ppm NH3/air gas at 150 °C, are observed. This performance is superior to other previously reported ITO thin-film-based ammonia sensors. Moreover, a good logarithmic linear relationship between the sensitivity ratio and the NH3 concentration is found. Therefore, based on the advantages of simple structure, easy operation, low cost, and excellent properties, the studied device gives a promise for high-performance ammonia sensing applications.
AB - Indium tin oxide (ITO) thin-film-based ammonia sensors on sapphire and quartz substrates, fabricated by radio-frequency sputtering with substrate heated treatments, are studied and demonstrated. Experimentally, good NH 3 sensing properties of ITO thin films deposited on a quartz substrate, with a substrate temperature Ts of 100 °C, including a high sensitivity ratio of 2312%, and fast response and recovery times of 73 and 104 s upon the introduction of a 1000-ppm NH3/air gas at 150 °C, are observed. This performance is superior to other previously reported ITO thin-film-based ammonia sensors. Moreover, a good logarithmic linear relationship between the sensitivity ratio and the NH3 concentration is found. Therefore, based on the advantages of simple structure, easy operation, low cost, and excellent properties, the studied device gives a promise for high-performance ammonia sensing applications.
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U2 - 10.1109/TED.2011.2167234
DO - 10.1109/TED.2011.2167234
M3 - Article
AN - SCOPUS:82155172893
VL - 58
SP - 4407
EP - 4413
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
SN - 0018-9383
IS - 12
M1 - 6031908
ER -