Ammonia Sensing Performance of a GaN-Based Schottky Diode Incorporating a Platinum Thin Film and a GaOx Dielectric

I. Ping Liu; Ching Hong Chang; Bu Yuan Ke; Kun Wei Lin

doi:10.1109/JSEN.2019.2930635

Ammonia Sensing Performance of a GaN-Based Schottky Diode Incorporating a Platinum Thin Film and a GaOx Dielectric

I. Ping Liu, Ching Hong Chang, Bu Yuan Ke, Kun Wei Lin

化學工程學系

研究成果: Article › 同行評審

4 引文斯高帕斯（Scopus）

摘要

A GaN-based Schottky diode incorporating a catalytic Pt thin film and a GaOx dielectric is demonstrated for ammonia (NH₃) gas sensing. The GaOx dielectric is formed by a proper hydrogen peroxide (H₂O₂) treatment on the GaN surface. Based on the effective dissociation of ammonia molecules on Pt surface and suppressed leakage current resulting from the presence of GaOx oxide, the studied Pt/GaOx/GaN Schottky diode exhibits good ammonia sensing performance. Experimentally, a very high sensing response of 252 under 1000 ppm NH₃/air gas and an extremely low detection level of 0.4 ppm NH₃/air are obtained at 473K, the optimal operating temperature. The sensing speed can be enhanced with an increase in temperature and ammonia concentration. The related response and recovery time constants are compared to those of reported Schottky diode-type ammonia sensors. Therefore, based on these good properties and the advantages of a simple structure and easy fabrication, the studied device provides promise for high-performance ammonia sensing applications.

原文	English
文章編號	8769889
頁（從 - 到）	10207-10213
頁數	7
期刊	IEEE Sensors Journal
卷	19
發行號	22
DOIs	https://doi.org/10.1109/JSEN.2019.2930635
出版狀態	Published - 2019 11月 15

All Science Journal Classification (ASJC) codes

儀器
電氣與電子工程

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10.1109/JSEN.2019.2930635

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title = "Ammonia Sensing Performance of a GaN-Based Schottky Diode Incorporating a Platinum Thin Film and a GaOx Dielectric",

abstract = "A GaN-based Schottky diode incorporating a catalytic Pt thin film and a GaOx dielectric is demonstrated for ammonia (NH3) gas sensing. The GaOx dielectric is formed by a proper hydrogen peroxide (H2O2) treatment on the GaN surface. Based on the effective dissociation of ammonia molecules on Pt surface and suppressed leakage current resulting from the presence of GaOx oxide, the studied Pt/GaOx/GaN Schottky diode exhibits good ammonia sensing performance. Experimentally, a very high sensing response of 252 under 1000 ppm NH3/air gas and an extremely low detection level of 0.4 ppm NH3/air are obtained at 473K, the optimal operating temperature. The sensing speed can be enhanced with an increase in temperature and ammonia concentration. The related response and recovery time constants are compared to those of reported Schottky diode-type ammonia sensors. Therefore, based on these good properties and the advantages of a simple structure and easy fabrication, the studied device provides promise for high-performance ammonia sensing applications.",

author = "Liu, {I. Ping} and Chang, {Ching Hong} and Ke, {Bu Yuan} and Lin, {Kun Wei}",

note = "Funding Information: Manuscript received June 4, 2019; accepted July 12, 2019. Date of publication July 23, 2019; date of current version October 17, 2019. This work was supported in part by the Chaoyang University of Technology (CYUT) and Higher Education Sprout Project, Ministry of Education, Taiwan, under the Project (The R&D and the cultivation of talent for Health-Enhancement Products). The associate editor coordinating the review of this paper and approving it for publication was Dr. Gymama Slaughter. (Corresponding author: Kun-Wei Lin.) I-P. Liu is with the Department of Chemical Engineering, National Cheng Kung University, Tainan 70101, Taiwan. Publisher Copyright: {\textcopyright} 2001-2012 IEEE.",

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N1 - Funding Information: Manuscript received June 4, 2019; accepted July 12, 2019. Date of publication July 23, 2019; date of current version October 17, 2019. This work was supported in part by the Chaoyang University of Technology (CYUT) and Higher Education Sprout Project, Ministry of Education, Taiwan, under the Project (The R&D and the cultivation of talent for Health-Enhancement Products). The associate editor coordinating the review of this paper and approving it for publication was Dr. Gymama Slaughter. (Corresponding author: Kun-Wei Lin.) I-P. Liu is with the Department of Chemical Engineering, National Cheng Kung University, Tainan 70101, Taiwan. Publisher Copyright: © 2001-2012 IEEE.

PY - 2019/11/15

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N2 - A GaN-based Schottky diode incorporating a catalytic Pt thin film and a GaOx dielectric is demonstrated for ammonia (NH3) gas sensing. The GaOx dielectric is formed by a proper hydrogen peroxide (H2O2) treatment on the GaN surface. Based on the effective dissociation of ammonia molecules on Pt surface and suppressed leakage current resulting from the presence of GaOx oxide, the studied Pt/GaOx/GaN Schottky diode exhibits good ammonia sensing performance. Experimentally, a very high sensing response of 252 under 1000 ppm NH3/air gas and an extremely low detection level of 0.4 ppm NH3/air are obtained at 473K, the optimal operating temperature. The sensing speed can be enhanced with an increase in temperature and ammonia concentration. The related response and recovery time constants are compared to those of reported Schottky diode-type ammonia sensors. Therefore, based on these good properties and the advantages of a simple structure and easy fabrication, the studied device provides promise for high-performance ammonia sensing applications.

AB - A GaN-based Schottky diode incorporating a catalytic Pt thin film and a GaOx dielectric is demonstrated for ammonia (NH3) gas sensing. The GaOx dielectric is formed by a proper hydrogen peroxide (H2O2) treatment on the GaN surface. Based on the effective dissociation of ammonia molecules on Pt surface and suppressed leakage current resulting from the presence of GaOx oxide, the studied Pt/GaOx/GaN Schottky diode exhibits good ammonia sensing performance. Experimentally, a very high sensing response of 252 under 1000 ppm NH3/air gas and an extremely low detection level of 0.4 ppm NH3/air are obtained at 473K, the optimal operating temperature. The sensing speed can be enhanced with an increase in temperature and ammonia concentration. The related response and recovery time constants are compared to those of reported Schottky diode-type ammonia sensors. Therefore, based on these good properties and the advantages of a simple structure and easy fabrication, the studied device provides promise for high-performance ammonia sensing applications.

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Ammonia Sensing Performance of a GaN-Based Schottky Diode Incorporating a Platinum Thin Film and a GaOx Dielectric

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