摘要
A GaN-based Schottky diode incorporating a catalytic Pt thin film and a GaOx dielectric is demonstrated for ammonia (NH3) gas sensing. The GaOx dielectric is formed by a proper hydrogen peroxide (H2O2) treatment on the GaN surface. Based on the effective dissociation of ammonia molecules on Pt surface and suppressed leakage current resulting from the presence of GaOx oxide, the studied Pt/GaOx/GaN Schottky diode exhibits good ammonia sensing performance. Experimentally, a very high sensing response of 252 under 1000 ppm NH3/air gas and an extremely low detection level of 0.4 ppm NH3/air are obtained at 473K, the optimal operating temperature. The sensing speed can be enhanced with an increase in temperature and ammonia concentration. The related response and recovery time constants are compared to those of reported Schottky diode-type ammonia sensors. Therefore, based on these good properties and the advantages of a simple structure and easy fabrication, the studied device provides promise for high-performance ammonia sensing applications.
| 原文 | English |
|---|---|
| 文章編號 | 8769889 |
| 頁（從 - 到） | 10207-10213 |
| 頁數 | 7 |
| 期刊 | IEEE Sensors Journal |
| 卷 | 19 |
| 發行號 | 22 |
| DOIs | |
| 出版狀態 | Published - 2019 十一月 15 |
指紋
All Science Journal Classification (ASJC) codes
- Instrumentation
- Electrical and Electronic Engineering
引用此文
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Ammonia Sensing Performance of a GaN-Based Schottky Diode Incorporating a Platinum Thin Film and a GaOx Dielectric. / Liu, I. Ping; Chang, Ching Hong; Ke, Bu Yuan; Lin, Kun Wei.
於: IEEE Sensors Journal, 卷 19, 編號 22, 8769889, 15.11.2019, p. 10207-10213.研究成果: Article
TY - JOUR
T1 - Ammonia Sensing Performance of a GaN-Based Schottky Diode Incorporating a Platinum Thin Film and a GaOx Dielectric
AU - Liu, I. Ping
AU - Chang, Ching Hong
AU - Ke, Bu Yuan
AU - Lin, Kun Wei
PY - 2019/11/15
Y1 - 2019/11/15
N2 - A GaN-based Schottky diode incorporating a catalytic Pt thin film and a GaOx dielectric is demonstrated for ammonia (NH3) gas sensing. The GaOx dielectric is formed by a proper hydrogen peroxide (H2O2) treatment on the GaN surface. Based on the effective dissociation of ammonia molecules on Pt surface and suppressed leakage current resulting from the presence of GaOx oxide, the studied Pt/GaOx/GaN Schottky diode exhibits good ammonia sensing performance. Experimentally, a very high sensing response of 252 under 1000 ppm NH3/air gas and an extremely low detection level of 0.4 ppm NH3/air are obtained at 473K, the optimal operating temperature. The sensing speed can be enhanced with an increase in temperature and ammonia concentration. The related response and recovery time constants are compared to those of reported Schottky diode-type ammonia sensors. Therefore, based on these good properties and the advantages of a simple structure and easy fabrication, the studied device provides promise for high-performance ammonia sensing applications.
AB - A GaN-based Schottky diode incorporating a catalytic Pt thin film and a GaOx dielectric is demonstrated for ammonia (NH3) gas sensing. The GaOx dielectric is formed by a proper hydrogen peroxide (H2O2) treatment on the GaN surface. Based on the effective dissociation of ammonia molecules on Pt surface and suppressed leakage current resulting from the presence of GaOx oxide, the studied Pt/GaOx/GaN Schottky diode exhibits good ammonia sensing performance. Experimentally, a very high sensing response of 252 under 1000 ppm NH3/air gas and an extremely low detection level of 0.4 ppm NH3/air are obtained at 473K, the optimal operating temperature. The sensing speed can be enhanced with an increase in temperature and ammonia concentration. The related response and recovery time constants are compared to those of reported Schottky diode-type ammonia sensors. Therefore, based on these good properties and the advantages of a simple structure and easy fabrication, the studied device provides promise for high-performance ammonia sensing applications.
UR - http://www.scopus.com/inward/record.url?scp=85073872247&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85073872247&partnerID=8YFLogxK
U2 - 10.1109/JSEN.2019.2930635
DO - 10.1109/JSEN.2019.2930635
M3 - Article
AN - SCOPUS:85073872247
VL - 19
SP - 10207
EP - 10213
JO - IEEE Sensors Journal
JF - IEEE Sensors Journal
SN - 1530-437X
IS - 22
M1 - 8769889
ER -