Amorphous IGZO nonvolatile memory thin film transistors using Ta 2O 5 gate dielectric

C. J. Chiu, S. P. Chang, W. Y. Weng, S. J. Chang

研究成果: Conference contribution

1 引文 (Scopus)

摘要

A nonvolatile memory thin-film transistor (MTFT) using an amorphous indium gallium zinc oxide (a-IGZO) semiconducting channel and a Ta 2O 5 gate insulator is proposed. The high-dielectric-constant material Ta 2Oi was deposited by e-beaming and used for the charge storage layer, i.e., a metal-oxide-semiconductor (MOS) capacitor. We obtained memory windows (δVth = 2 V) at 3-V gate voltage and realized reliable memory operations. Therefore, a-IGZO TFT with Ta 2Oi can be employed in integrated high-performance nonvolatile memory devices for applications to transparent displays and flexible electronic devices.

原文English
主出版物標題Nanotechnology and Advanced Materials
頁面233-238
頁數6
DOIs
出版狀態Published - 2012 四月 2
事件2012 International Conference on Nanotechnology Technology and Advanced Materials, ICNTAM 2012 - Hong Kong, Hong Kong
持續時間: 2012 四月 122012 四月 13

出版系列

名字Advanced Materials Research
486
ISSN(列印)1022-6680

Other

Other2012 International Conference on Nanotechnology Technology and Advanced Materials, ICNTAM 2012
國家Hong Kong
城市Hong Kong
期間12-04-1212-04-13

指紋

Gate dielectrics
Thin film transistors
Data storage equipment
Gallium
Zinc oxide
Indium
Flexible electronics
Capacitors
Permittivity
Display devices
Electric potential
Metals

All Science Journal Classification (ASJC) codes

  • Engineering(all)

引用此文

Chiu, C. J., Chang, S. P., Weng, W. Y., & Chang, S. J. (2012). Amorphous IGZO nonvolatile memory thin film transistors using Ta 2O 5 gate dielectric. 於 Nanotechnology and Advanced Materials (頁 233-238). (Advanced Materials Research; 卷 486). https://doi.org/10.4028/www.scientific.net/AMR.486.233
Chiu, C. J. ; Chang, S. P. ; Weng, W. Y. ; Chang, S. J. / Amorphous IGZO nonvolatile memory thin film transistors using Ta 2O 5 gate dielectric. Nanotechnology and Advanced Materials. 2012. 頁 233-238 (Advanced Materials Research).
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Chiu, CJ, Chang, SP, Weng, WY & Chang, SJ 2012, Amorphous IGZO nonvolatile memory thin film transistors using Ta 2O 5 gate dielectric. 於 Nanotechnology and Advanced Materials. Advanced Materials Research, 卷 486, 頁 233-238, 2012 International Conference on Nanotechnology Technology and Advanced Materials, ICNTAM 2012, Hong Kong, Hong Kong, 12-04-12. https://doi.org/10.4028/www.scientific.net/AMR.486.233

Amorphous IGZO nonvolatile memory thin film transistors using Ta 2O 5 gate dielectric. / Chiu, C. J.; Chang, S. P.; Weng, W. Y.; Chang, S. J.

Nanotechnology and Advanced Materials. 2012. p. 233-238 (Advanced Materials Research; 卷 486).

研究成果: Conference contribution

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AB - A nonvolatile memory thin-film transistor (MTFT) using an amorphous indium gallium zinc oxide (a-IGZO) semiconducting channel and a Ta 2O 5 gate insulator is proposed. The high-dielectric-constant material Ta 2Oi was deposited by e-beaming and used for the charge storage layer, i.e., a metal-oxide-semiconductor (MOS) capacitor. We obtained memory windows (δVth = 2 V) at 3-V gate voltage and realized reliable memory operations. Therefore, a-IGZO TFT with Ta 2Oi can be employed in integrated high-performance nonvolatile memory devices for applications to transparent displays and flexible electronic devices.

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Chiu CJ, Chang SP, Weng WY, Chang SJ. Amorphous IGZO nonvolatile memory thin film transistors using Ta 2O 5 gate dielectric. 於 Nanotechnology and Advanced Materials. 2012. p. 233-238. (Advanced Materials Research). https://doi.org/10.4028/www.scientific.net/AMR.486.233