Amorphous Indium-Gallium-Oxide UV Photodetectors

Ting Hao Chang; Shoou Jinn Chang; Wen Yin Weng; Chiu Jung Chiu; Chi Yu Wei

doi:10.1109/LPT.2015.2453317

Amorphous Indium-Gallium-Oxide UV Photodetectors

Ting Hao Chang
, Shoou Jinn Chang
, Wen Yin Weng
, Chiu Jung Chiu
, Chi Yu Wei

研究成果: Article › 同行評審

58 引文斯高帕斯（Scopus）

摘要

We report the fabrication of amorphous (In_xGa_1-x)₂O₃ metal-semiconductor-metal ultraviolet (UV) photodetectors on glass substrate by co-sputtering. It was found that, we could change the cutoff wavelength of the fabricated photodetectors by changing the RF sputtering power of the In₂O₃ target. With 5 V applied bias, it was found that the measured dark currents were 2× 10^-12 , 1× 10^-11 , and 2.3×10^-11 A for sample A prepared with 40 W In₂O₃ sputtering power, sample B prepared with 50 W In₂O₃ sputtering power, and sample C prepared with 60 W In₂O₃ sputtering power, respectively. It was also found that the UV-to-visible rejection ratios were 3× 10³ , 5× 10³ , and 1.5× 10⁴ for samples A, B, and C, respectively. Furthermore, it was found that the response speeds of the fabricated devices were good.

原文	English
文章編號	7152846
頁（從 - 到）	2083-2086
頁數	4
期刊	IEEE Photonics Technology Letters
卷	27
發行號	19
DOIs	https://doi.org/10.1109/LPT.2015.2453317
出版狀態	Published - 2015 10月 1

All Science Journal Classification (ASJC) codes

電子、光磁材料
原子與分子物理與光學
電氣與電子工程

存取文件

10.1109/LPT.2015.2453317

其它文件與鏈接

引用此

@article{dee8bbaf2dc34e8c85cbc98d387e4e07,

title = "Amorphous Indium-Gallium-Oxide UV Photodetectors",

abstract = "We report the fabrication of amorphous (InxGa1-x)2O3 metal-semiconductor-metal ultraviolet (UV) photodetectors on glass substrate by co-sputtering. It was found that, we could change the cutoff wavelength of the fabricated photodetectors by changing the RF sputtering power of the In2O3 target. With 5 V applied bias, it was found that the measured dark currents were 2{\texttimes} 10-12 , 1{\texttimes} 10-11 , and 2.3{\texttimes}10-11 A for sample A prepared with 40 W In2O3 sputtering power, sample B prepared with 50 W In2O3 sputtering power, and sample C prepared with 60 W In2O3 sputtering power, respectively. It was also found that the UV-to-visible rejection ratios were 3{\texttimes} 103 , 5{\texttimes} 103 , and 1.5{\texttimes} 104 for samples A, B, and C, respectively. Furthermore, it was found that the response speeds of the fabricated devices were good.",

author = "Chang, \{Ting Hao\} and Chang, \{Shoou Jinn\} and Weng, \{Wen Yin\} and Chiu, \{Chiu Jung\} and Wei, \{Chi Yu\}",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.",

year = "2015",

month = oct,

day = "1",

doi = "10.1109/LPT.2015.2453317",

language = "English",

volume = "27",

pages = "2083--2086",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "19",

}

TY - JOUR

T1 - Amorphous Indium-Gallium-Oxide UV Photodetectors

AU - Chang, Ting Hao

AU - Chang, Shoou Jinn

AU - Weng, Wen Yin

AU - Chiu, Chiu Jung

AU - Wei, Chi Yu

PY - 2015/10/1

Y1 - 2015/10/1

N2 - We report the fabrication of amorphous (InxGa1-x)2O3 metal-semiconductor-metal ultraviolet (UV) photodetectors on glass substrate by co-sputtering. It was found that, we could change the cutoff wavelength of the fabricated photodetectors by changing the RF sputtering power of the In2O3 target. With 5 V applied bias, it was found that the measured dark currents were 2× 10-12 , 1× 10-11 , and 2.3×10-11 A for sample A prepared with 40 W In2O3 sputtering power, sample B prepared with 50 W In2O3 sputtering power, and sample C prepared with 60 W In2O3 sputtering power, respectively. It was also found that the UV-to-visible rejection ratios were 3× 103 , 5× 103 , and 1.5× 104 for samples A, B, and C, respectively. Furthermore, it was found that the response speeds of the fabricated devices were good.

AB - We report the fabrication of amorphous (InxGa1-x)2O3 metal-semiconductor-metal ultraviolet (UV) photodetectors on glass substrate by co-sputtering. It was found that, we could change the cutoff wavelength of the fabricated photodetectors by changing the RF sputtering power of the In2O3 target. With 5 V applied bias, it was found that the measured dark currents were 2× 10-12 , 1× 10-11 , and 2.3×10-11 A for sample A prepared with 40 W In2O3 sputtering power, sample B prepared with 50 W In2O3 sputtering power, and sample C prepared with 60 W In2O3 sputtering power, respectively. It was also found that the UV-to-visible rejection ratios were 3× 103 , 5× 103 , and 1.5× 104 for samples A, B, and C, respectively. Furthermore, it was found that the response speeds of the fabricated devices were good.

UR - https://www.scopus.com/pages/publications/84959356626

UR - https://www.scopus.com/pages/publications/84959356626#tab=citedBy

U2 - 10.1109/LPT.2015.2453317

DO - 10.1109/LPT.2015.2453317

M3 - Article

AN - SCOPUS:84959356626

SN - 1041-1135

VL - 27

SP - 2083

EP - 2086

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 19

M1 - 7152846

ER -

Amorphous Indium-Gallium-Oxide UV Photodetectors

摘要

All Science Journal Classification (ASJC) codes

存取文件

其它文件與鏈接

指紋

引用此