Amorphous indium titanium zinc oxide thin film transistor and impact of gate dielectrics on its photo-electrical properties

Ming Hung Hsu, Sheng Po Chang, Shoou Jinn Chang, Wei Ting Wu, Jyun Yi Li

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

Bottom-gate thin film transistors (TFTs) with indium titanium zinc oxide (InTiZnO) active layer were prepared by radio-frequency (RF) sputtering system at room temperature. Alumina was introduced as the gate dielectric material to acquire better electrical properties by improving the quality of interface between dielectric and channel layer. At zero gate bias and under 290-nm light illumination, the TFTs exhibited a photoresponsivity of 2.3 A/W. The photo-to-dark current ratio was almost up to 105 and the UV-to-visible rejection ratio was 1817. These results revealed that InTiZnO, as a novel UV-sensitive material, had potential for practical optoelectronic applications with high performance.

原文English
頁(從 - 到)Q3049-Q3053
期刊ECS Journal of Solid State Science and Technology
7
發行號7
DOIs
出版狀態Published - 2018

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

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