TY - JOUR
T1 - Amorphous indium-zinc oxide semiconductor thin-film transistors
AU - Li, Jun Yi
AU - Chang, Sheng Po
AU - Hua, Wen Chen
AU - Chang, Shoou Jinn
N1 - Publisher Copyright:
Copyright © 2014 American Scientific Publishers. All rights reserved.
PY - 2014/6/1
Y1 - 2014/6/1
N2 - We report on the performance and electrical properties of sputtering-processed amorphous indium- zinc oxide (α-IZO) thin-film transistors (TFTs). We were able to modulate the Ar and O components by changing the partial pressure. Additionally, the chemical composition of α-IZO had a significant effect on the field-effect mobility (μFE), carrier concentration, and subthreshold swing (SS) of the device. Sputtering-processed α-IZO TFTs were fabricated with an on/off current ratio of ∼107, a high mobility of 38.7 cm2/Vs, and a subthreshold slope as steep as 0.16 V/dec. Our results indicate that high-performance α-IZO TFTs can be successfully and easily fabricated using the sputtering process.
AB - We report on the performance and electrical properties of sputtering-processed amorphous indium- zinc oxide (α-IZO) thin-film transistors (TFTs). We were able to modulate the Ar and O components by changing the partial pressure. Additionally, the chemical composition of α-IZO had a significant effect on the field-effect mobility (μFE), carrier concentration, and subthreshold swing (SS) of the device. Sputtering-processed α-IZO TFTs were fabricated with an on/off current ratio of ∼107, a high mobility of 38.7 cm2/Vs, and a subthreshold slope as steep as 0.16 V/dec. Our results indicate that high-performance α-IZO TFTs can be successfully and easily fabricated using the sputtering process.
UR - http://www.scopus.com/inward/record.url?scp=84918780905&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84918780905&partnerID=8YFLogxK
U2 - 10.1166/jno.2014.1604
DO - 10.1166/jno.2014.1604
M3 - Article
AN - SCOPUS:84918780905
SN - 1555-130X
VL - 9
SP - 388
EP - 391
JO - Journal of Nanoelectronics and Optoelectronics
JF - Journal of Nanoelectronics and Optoelectronics
IS - 3
ER -