Amorphous indium-zinc oxide semiconductor thin-film transistors

We report on the performance and electrical properties of sputtering-processed amorphous indium- zinc oxide (α-IZO) thin-film transistors (TFTs). We were able to modulate the Ar and O components by changing the partial pressure. Additionally, the chemical composition of α-IZO had a significant effect on the field-effect mobility (μFE), carrier concentration, and subthreshold swing (SS) of the device. Sputtering-processed α-IZO TFTs were fabricated with an on/off current ratio of ∼10⁷, a high mobility of 38.7 cm²/Vs, and a subthreshold slope as steep as 0.16 V/dec. Our results indicate that high-performance α-IZO TFTs can be successfully and easily fabricated using the sputtering process.