Amorphous InGaZnO Ultraviolet Phototransistors with a Thin Ga2O3 Layer

Shoou Jinn Chang; T. H. Chang; W. Y. Weng; C. J. Chiu; S. P. Chang

doi:10.1109/JSTQE.2014.2330604

Amorphous InGaZnO Ultraviolet Phototransistors with a Thin Ga₂O₃ Layer

Shoou Jinn Chang, T. H. Chang, W. Y. Weng, C. J. Chiu, S. P. Chang

研究成果: Article › 同行評審

18 引文斯高帕斯（Scopus）

摘要

The authors report the fabrication of amorphous IGZO (a-IGZO) phototransistors with a thin Ga₂O₃ layer. It was found that the performances of the phototransistors depend strongly on the oxygen partial pressure during the deposition of the Ga₂O₃ layer. It was also found that the fabricated devices exhibited good electrical properties with electron mobility (μ_FE) of 13.2 cm²/V·s, subthreshold swing (SS) of 0.13 V/decade, and ON/OFF current ratio > 5 × 10⁵. Furthermore, it was found that two cutoffs exist in the devices prepared with 25% oxygen partial pressure. The deep-ultraviolet (UV)-to-visible rejection ratio and near-UV-to-visible rejection ratio of the fabricated phototransistors were 10⁴ and 20, respectively.

原文	English
文章編號	6832459
頁（從 - 到）	125-129
頁數	5
期刊	IEEE Journal of Selected Topics in Quantum Electronics
卷	20
發行號	6
DOIs	https://doi.org/10.1109/JSTQE.2014.2330604
出版狀態	Published - 2014 11月 1

All Science Journal Classification (ASJC) codes

原子與分子物理與光學
電氣與電子工程

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10.1109/JSTQE.2014.2330604

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@article{2ac47d34996b4e8ca48141f916352f1b,

title = "Amorphous InGaZnO Ultraviolet Phototransistors with a Thin Ga2O3 Layer",

abstract = "The authors report the fabrication of amorphous IGZO (a-IGZO) phototransistors with a thin Ga2O3 layer. It was found that the performances of the phototransistors depend strongly on the oxygen partial pressure during the deposition of the Ga2O3 layer. It was also found that the fabricated devices exhibited good electrical properties with electron mobility (μFE) of 13.2 cm2/V·s, subthreshold swing (SS) of 0.13 V/decade, and ON/OFF current ratio > 5 × 105. Furthermore, it was found that two cutoffs exist in the devices prepared with 25% oxygen partial pressure. The deep-ultraviolet (UV)-to-visible rejection ratio and near-UV-to-visible rejection ratio of the fabricated phototransistors were 104 and 20, respectively.",

author = "Chang, {Shoou Jinn} and Chang, {T. H.} and Weng, {W. Y.} and Chiu, {C. J.} and Chang, {S. P.}",

note = "Publisher Copyright: {\textcopyright} 1995-2012 IEEE.",

year = "2014",

month = nov,

day = "1",

doi = "10.1109/JSTQE.2014.2330604",

language = "English",

volume = "20",

pages = "125--129",

journal = "IEEE Journal of Selected Topics in Quantum Electronics",

issn = "1077-260X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

}

TY - JOUR

T1 - Amorphous InGaZnO Ultraviolet Phototransistors with a Thin Ga2O3 Layer

AU - Chang, Shoou Jinn

AU - Chang, T. H.

AU - Weng, W. Y.

AU - Chiu, C. J.

AU - Chang, S. P.

PY - 2014/11/1

Y1 - 2014/11/1

N2 - The authors report the fabrication of amorphous IGZO (a-IGZO) phototransistors with a thin Ga2O3 layer. It was found that the performances of the phototransistors depend strongly on the oxygen partial pressure during the deposition of the Ga2O3 layer. It was also found that the fabricated devices exhibited good electrical properties with electron mobility (μFE) of 13.2 cm2/V·s, subthreshold swing (SS) of 0.13 V/decade, and ON/OFF current ratio > 5 × 105. Furthermore, it was found that two cutoffs exist in the devices prepared with 25% oxygen partial pressure. The deep-ultraviolet (UV)-to-visible rejection ratio and near-UV-to-visible rejection ratio of the fabricated phototransistors were 104 and 20, respectively.

AB - The authors report the fabrication of amorphous IGZO (a-IGZO) phototransistors with a thin Ga2O3 layer. It was found that the performances of the phototransistors depend strongly on the oxygen partial pressure during the deposition of the Ga2O3 layer. It was also found that the fabricated devices exhibited good electrical properties with electron mobility (μFE) of 13.2 cm2/V·s, subthreshold swing (SS) of 0.13 V/decade, and ON/OFF current ratio > 5 × 105. Furthermore, it was found that two cutoffs exist in the devices prepared with 25% oxygen partial pressure. The deep-ultraviolet (UV)-to-visible rejection ratio and near-UV-to-visible rejection ratio of the fabricated phototransistors were 104 and 20, respectively.

UR - http://www.scopus.com/inward/record.url?scp=84921260410&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84921260410&partnerID=8YFLogxK

U2 - 10.1109/JSTQE.2014.2330604

DO - 10.1109/JSTQE.2014.2330604

M3 - Article

AN - SCOPUS:84921260410

SN - 1077-260X

VL - 20

SP - 125

EP - 129

JO - IEEE Journal of Selected Topics in Quantum Electronics

JF - IEEE Journal of Selected Topics in Quantum Electronics

IS - 6

M1 - 6832459

ER -

Amorphous InGaZnO Ultraviolet Phototransistors with a Thin Ga2O3 Layer

摘要

All Science Journal Classification (ASJC) codes

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Amorphous InGaZnO Ultraviolet Phototransistors with a Thin Ga₂O₃ Layer