Amorphous InGaZnO ultraviolet phototransistors with double-stack Ga 2O3/SiO2 dielectric

T. H. Chang, C. J. Chiu, S. J. Chang, T. Y. Tsai, T. H. Yang, Z. D. Huang, W. Y. Weng

研究成果: Article同行評審

55 引文 斯高帕斯(Scopus)

摘要

This study investigates the electrical performance of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors with Ga2O 3 gate dielectric and applied on deep-ultraviolet phototransistors. To reduce the leakage current, we introduce the SiO2 interlayer dielectric, which effectively reduces the off-current. Under the illumination of 250 nm, the measured responsivity of the device was 3.2 A/W at an applied gate bias of 0 V. The photo-generated carriers were injected into the channel by the applied electric field and Fowler-Nordheim tunneling. A large photocurrent and responsivity can be obtained which is attributed to the high mobility of the a-IGZO channel.

原文English
文章編號221104
期刊Applied Physics Letters
102
發行號22
DOIs
出版狀態Published - 2013 6月 3

All Science Journal Classification (ASJC) codes

  • 物理與天文學(雜項)

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