Amorphous ITZO Thin-Film Transistors by Using Ultrasonic Spray Pyrolysis Deposition

Han Yin Liu, Wei Chou Hsu, Jui Hsuan Chen, Pei Huang Hsu, Ching Sung Lee

研究成果: Article

摘要

This study demonstrates an amorphous indium-tin-zinc-oxide (a-ITZO) thin-film transistor (TFT) using an ultrasonic spray pyrolysis deposition (USPD) method. X-ray diffraction, X-ray photoelectron spectroscopy, Tauc plot, and photoluminescence spectrum are used to confirm the crystal structure, oxygen contents, energy bandgap, and the existence of oxygen deficiencies. Besides, these material characteristics are compared with a sputter-deposited ITZO film. The TFT based on the USPD-deposited ITZO shows better electrical performance than the TFT based on the sputter-deposited ITZO. In addition, the negative-/positive-bias illumination stress results indicate that the TFT based on the USPD-deposited ITZO film is more stable than the one based on the sputter-deposited ITZO.

原文English
文章編號8974445
頁(從 - 到)1009-1013
頁數5
期刊IEEE Transactions on Electron Devices
67
發行號3
DOIs
出版狀態Published - 2020 三月

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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