Amorphous TiO2-based thin-film phototransistor

Han Yin Liu, Ruei Chin Huang, Yi Ying Li, Ching Sung Lee, Wei Chou Hsu

研究成果: Article同行評審

3 引文 斯高帕斯(Scopus)

摘要

This letter presents amorphous TiO2-based thin-film phototransistors whose structures are designed for front-side and back-side illumination. The channel and gate dielectric layers are deposited by ultrasonic spray pyrolysisdeposition,which is a non-vacuum, cost-effective, thin-film deposition technique similar to chemical vapor deposition. The material structure, chemical composition, and optical characteristics of the amorphous TiO2 thin film are analyzed. The phototransistor shows the typical current-voltage (I-V) characteristics of field-effect transistors. It demonstrates a UV-to-visible rejection ratio of approximately 70 -80, a high responsivity of 13.64 A/W, and a high detectivity of 1.64 × 1012 Jones. The phototransistor can be operated in the high-photo-responsivity and highdetectivitymodes by biasing at different quiescent points.

原文English
文章編號7898432
頁(從 - 到)756-759
頁數4
期刊IEEE Electron Device Letters
38
發行號6
DOIs
出版狀態Published - 2017 六月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 電氣與電子工程

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